Samsung Electronics Co., Ltd.

Seoul National University

Samsung Led Co., Ltd.

Bok-ki Min

Jun-youn Kim

Hyun-gi Hong

Young-soo Park

Young-jo Tak

Su-hee Chae

Jae-Won Lee

Hyung-su Jeong

Taek Woon Kim

Jae-won Lee

Yoon-Dong Park

Seung-hoon Lee

Young-Gu Jin

Kyoung-ho Ha

Cheol-soo Sone

Jeong-wook Lee

Won-joo Kim

Seong-gu Kim

Sung-Dong Suh

Young-gu Jin

Han-youl Ryu

Soo-Haeng Cho

Dae-kil Cha

Heon-su Jeon

Dae-Kil Cha

Jin-seo Im

Kwang-hyeon Baik

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned distributed Bragg reflector (DBR) on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR and regions between patterns of the DBR.

Light emitting devices and methods of manufacturing the same

Example embodiments are directed to light-emitting devices (LEDs) and methods of manufacturing the same. The LED includes a first semiconductor layer; a second semiconductor layer; an active layer formed between the first and second semiconductor layers; and an emission pattern layer including a plurality of layers on the first semiconductor layer, the emission pattern including an emission pattern for externally emitting light generated from the active layer.

Semiconductor light emitting devices having an uneven emission pattern layer and methods of manufacturing the same

Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.

GaN based light emitting devices utilizing dispersion bragg reflection layer

A multi-port light source of a photonic integrated circuit (PIC) may include a light emission portion for generating light; and a plurality of waveguides on opposite sides of the light emission portion to guide the light. A multi-port light source of a photonic integrated circuit (PIC) may include a first layer including a first pattern and a second pattern that are different from each other; an insulating layer on at least a region of the first layer; an active layer on at least a region of the insulating layer; and a reflective layer on the active layer.

Multi-port light sources of photonic integrated circuits

A light source for a photonic integrated circuit may comprise a reflection coupling layer formed on a substrate in which an optical waveguide is provided, at least one side of the reflection coupling layer being optically connected to the optical waveguide; an optical mode alignment layer provided on the reflection coupling layer; and/or an upper structure provided on the optical mode alignment layer and including an active layer for generating light and a reflection layer provided on the active layer. A light source for a photonic integrated circuit may comprise a lower reflection layer; an optical waveguide optically connected to the lower reflection layer; an optical mode alignment layer on the lower reflection layer; an active layer on the optical mode alignment layer; and/or an upper reflection layer on the active layer.

Hybrid laser light sources for photonic integrated circuits

Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer.

Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same

A light emitting device may include a substrate, an n-type clad layer, an active layer, and a p-type clad layer. A concave-convex pattern having a plurality of grooves and a mesa between each of the plurality of grooves may be formed on the substrate, and a reflective layer may be formed on the surfaces of the plurality of grooves or the mesa between each of the plurality of grooves. Therefore, light generated in the active layer may be reflected by the reflective layer, and extracted to an external location.

Light emitting device and method of manufacturing the same

A photodetector includes a waveguide on a substrate, and a photodetection portion connected to the waveguide. The photodetection portion includes a first semiconductor layer, graphene on the semiconductor layer, and a second semiconductor layer on the graphene. A first electrode and a second electrode separated from the first ridge portion and electrically connected to the graphene.

Waveguide-integrated graphene photodetectors

According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern.

Vertical light emitting device

An image sensor includes a plurality of unit pixels arranged in an array. Each unit pixel includes a plurality of sub-pixels configured to be irradiated by light having the same wavelength. Each sub-pixel includes a plurality of floating body transistors. Each floating body transistor includes a source region, a drain region, a floating body region between the source region and the drain region, and a gate electrode formed on the floating body region.

Sub-pixels, unit pixels, image sensors and methods of operating the same

An image sensor includes a plurality of pixels disposed in an array, each pixel comprising a first region and a second region, the first region and the second region separated from each other in a semiconductor layer, and doped with impurities having different conductivities from each other, a photoelectric conversion region formed between the first and second regions, and at least one metal nanodot that focuses an incident light onto the photoelectric conversion region.

Growing community of inventors

Suwon-si, South Korea

Bok-ki Min