National Taiwan University

Bohr-Ran Huang

Jinn P Chu

Chia-Hao Chang

Adhimoorthy Saravanan

Shyan-Kay Jou

You-Syuan Chen

A supercapacitor electrode includes a substrate and at least one nitrogen-doped ultra-nanocrystalline diamond layer. The nitrogen-doped ultra-nanocrystalline diamond layer is disposed on the substrate. The nitrogen-doped ultra-nanocrystalline diamond layer is a dense continuous film. A conductivity of the supercapacitor electrode is 130 S/cm or more. In addition, a manufacturing method of a supercapacitor electrode is provided.

Supercapacitor electrode, manufacturing method thereof, and supercapacitor

An ultraviolet sensor comprises a glass substrate, a semiconductor structure, an electrode layer and a thin film metallic glass. The semiconductor structure comprises a semiconductor seed layer formed on the glass substrate and a plurality of semiconductor nanostructures formed on the semiconductor seed layer. The electrode layer is formed between the semiconductor seed layer and the plurality of semiconductor nanostructures. The thin film metallic glass is in contact with the semiconductor structure, wherein an interface between the thin film metallic glass and the semiconductor structure forms a Schottky barrier junction to inhibit dark current and increase signal-to-noise ratio.

Growing community of inventors

Taipei, Taiwan

Bohr-Ran Huang