Samsung Electronics Co., Ltd.

Bohchang Kim

Jaeyong Jeong

Wontaeck Jung

Kuihan Ko

A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

Memory device, memory controller, and memory system including the same

A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.

Method of detecting a not-open string (N/O string), converting target data, with a value that matches inhibit data, to be programmed to target memory cells in the N/O string, and programming the memory cells

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Suwon-si, South Korea

Bohchang Kim