Samsung Display Co., Ltd.

Bogeon Jeon

Jungi Kim

Yang-Ho Jung

Jaehun Lee

Eunjeong Cho

Yungbin Chung

Taeyoung Ahn

Yangho Jung

Wooseok Jeon

Kabjong Seo

Seonhwa Choi

Sangwook Lee

Jin-Su Byun

Sunghoon Yang

Chulwon Park

Gwuihyun Park

Pilsoon Hong

Minsuk Ko

Jin-su Byun

Seungkyeng Cho

Chulhyun Baek

Injun Choi

Hokyung Jang

A display device includes a display panel including a plurality of light emitting areas; and an input sensor disposed on the display panel and having a first conductive layer and a first insulating layer disposed on the first conductive layer. The first insulating layer includes a plurality of optical patterns that extend in a direction away from the first conductive layer.

Display device and method of manufacturing the same

A display panel includes a display device layer including first to third light emitting areas and a non-tight emitting area and a light shielding member disposed on the display device laver. The light shielding member overlaps the non-light emitting area and includes light shielding openings corresponding to the first to third light emitting areas. A first portion of the light shielding member disposed between the first light emitting area and the second light emitting area has a first thickness at a first edge adjacent to the first light emitting area and a second thickness that is different from the first thickness at a second edge adjacent to the second light emitting area. A second portion of the light shielding member is disposed between the first light emitting area and the third light emitting area and has a uniform thickness.

Display panel having light shielding member with different thickness

A display device includes a display panel with a light emitting area from which a light exits and an input sensor disposed on the display panel. The input sensor includes a first conductive layer, a first insulating layer disposed on the first conductive layer and provided with a diffraction grating defined therein to correspond to the light emitting area, and a second conductive layer disposed on the first insulating layer and connected to the first conductive layer. The first insulating layer includes an organic layer covering the first conductive layer and an inorganic layer disposed on the organic layer. The organic layer and the inorganic layer include a plurality of holes defined therein to define the diffraction grating.

A manufacturing method of a mask includes forming a first mask layer, forming a second mask layer on the first mask layer, forming a photoresist pattern layer on the second mask layer, removing a first area of the second mask layer, which is exposed through the photoresist pattern layer, defining an opening through the first mask layer, removing a portion of the photoresist pattern layer to expose a portion of a second area of the second mask layer, and removing the portion of the second area of the second mask layer.

Mask, method of manufacturing the same, and method of manufacturing display panel

A method of manufacturing a display device includes providing a transistor on a light-emitting area of a substrate, patterning a first organic layer covering the transistor to provide a first insulating layer, providing a pixel electrode connected to the transistor, and patterning a second organic layer covering the first insulating layer and the pixel electrode to provide a second insulating layer which defines the light-emitting area. The first insulating layer includes a first area corresponding to the light-emitting area, and a second area outside the light-emitting area and having a thickness which is less than a thickness of the first area, within the light-emitting area, the second insulating layer covers edges of the pixel electrode and covers external lateral surfaces of the first area of the first insulating layer, and a height of the second insulating layer decreases along a direction from the first area to the second area.

A display device includes a light-emitting element on a light-emitting area of a substrate; a thin film transistor connected to the light-emitting element; a first insulating layer between the light-emitting element and the thin film transistor; and a second insulating layer which defines the light-emitting area and is between the thin film transistor and the second insulating layer. The first insulating layer includes a first area corresponding to the light-emitting area and a second area outside the light-emitting area, the first area has a first thickness, and the second area has a second thickness which is less than the first thickness, in a same one light-emitting area, the second insulating layer covers a lateral surface of the first area of the first insulating layer, and a height of the second insulating layer decreases along a direction from the first area to the second area.

A light emitting display device and a method of manufacturing a light emitting display device, the device including a substrate; a switching element on the substrate; a first electrode connected to the switching element; a second electrode on the first electrode; a light emitting element between the first electrode and the second electrode; and a non-conductive oxide film between the first electrode and the light emitting element.

Light emitting display device and method for fabricating the same

A liquid crystal display (LCD) device capable of perventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

Liquid crystal display device and method for fabricating the same

A display apparatus includes a first pixel, a second pixel, a light sensor, and a light shield. The first pixel has a first light-emitting device which includes a first emission layer that emits light in a first wavelength band in a first direction. The second pixel has a second light-emitting device which includes a second emission layer to emit light in a second wavelength band in a second direction different from the first direction. The second emission layer is below the first emission layer of the first light-emitting device. The light sensor senses light in the second wavelength band emitted from the second pixel and reflected by an object. The light shield is arranged along a light path incident to the light sensor.

Display apparatus and method of manufacturing the same

A liquid crystal display (LCD) device capable of preventing impurities from permeating into a channel area of a switching element, the LCD device including: a gate electrode above a substrate; a semiconductor layer which overlaps the gate electrode; a drain electrode and a source electrode which overlap the semiconductor layer; an ohmic contact layer between the semiconductor layer and the drain electrode and between the semiconductor layer and the source electrode; a pixel electrode which is connected to one of the drain electrode and the source electrode; and a gate insulating layer between the gate electrode and the semiconductor layer, the gate insulating layer comprising fluorine. A concentration of the fluorine is decreasing, as the fluorine of the gate insulating layer being more adjacent to the substrate.

A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on the gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a first passivation layer including a silicon nitride-based material and on the semiconductor layer, the source electrode, and the drain electrode; a second passivation layer including a silicon nitride-based material and on the first passivation layer; and a third passivation layer including a silicon nitride-based material and on the second passivation layer, where a content ratio of silicon in the first passivation layer is higher than a content ratio of silicon in the second passivation layer, and the content ratio of silicon in the second passivation layer is higher than a content ratio of silicon in the third passivation layer.

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Yongin-si, South Korea

Bogeon Jeon