Infineon Technologies Ag

Bogdan-Eugen Matei

Adrian Finney

Andrei Cobzaru

Ulrich Glaser

Michael Mayerhofer

Ilie-Ionut Cristea

Markus Mergens

Dorin Ioan Mohai

Gilles Guerrero

A semiconductor device comprises a semiconductor substrate doped with dopants of a first type and a vertical transistor composed of one or more transistor cells. Each transistor cell has a first region formed in the substrate and doped with dopants of a second type, and the first regions form first pn-junctions with the surrounding substrate. At least a first well region is formed in the substrate and doped with dopants of a second type to form a second pn-junction with the substrate. The first well region is electrically connected to the first regions of the vertical transistor via a semiconductor switch. The semiconductor device comprises a detection circuit, which is integrated in the substrate and configured to detect whether the first pn-junctions are reverse biased. The switch is opened when the first pn-junctions are reverse biased and the switch is closed when the first pn-junctions are not reverse biased.

Smart semiconductor switch

A monolithic integrated circuit includes a low-voltage control circuit, a vertical power transistor, and a source follower. The vertical power transistor includes at least a drain. The source follower includes a drain that is coupled to the drain of the vertical power transistor, a gate that is coupled to a limit voltage node, and a source that is coupled to a high impedance node. The source follower is arranged such that a source voltage at the source of the source follower is a voltage-limited version of the drain voltage of the vertical power transistor. The low-voltage control circuit includes a driver and protection circuit that is arranged to detect the source voltage, to drive the vertical power transistor, and to adjust how the vertical power transistor is biased based, at least in part, on the source voltage.

Inverse current protection circuit sensed with vertical source follower

A two-stage protection device for an electronic component protects against transient disturbances. The electronic component may be a semiconductor component, and may include one or multiple transistors and/or an integrated circuit. The protection device is connected to at least a first contact and a second contact of the electronic component, and is disposed essentially in parallel to the component that is to be protected, between the first contact and the second contact. The protection device includes a first stage with at least one diode and a second stage separated from the first stage by a resistor. The second stage includes at least one diode arrangement having two back-to-back disposed diodes which are disposed cathode-to-cathode.

ESD protection

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Braila, Romania

Bogdan-Eugen Matei