Samsung Electronics Co., Ltd.

Boeun Park

Jooho Lee

Jaeho Lee

Yongsung Kim

Jeonggyu Song

Younggeun Park

Eunae Cho

Haeryong Kim

Younsoo Kim

Hyangsook Lee

Eunha Lee

Yong-hee Cho

Narae Han

A capacitor includes a lower electrode, an upper electrode, a dielectric film between the lower electrode and the upper electrode, and a leakage current reduction film between the upper electrode and the dielectric film. The leakage current reduction film includes a doped AlZrO film, wherein an ionic radius of a dopant contained in the doped AlZrO film is greater than or equal to about 130 picometers (pm).

Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitor

Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.

Capacitors of semiconductor device capable of operating in high frequency operation environment

An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.

Anti-ferroelectric thin-film structure and electronic device including the same

A semiconductor device includes a lower electrode; an upper electrode disposed to be spaced apart from the lower electrode; and a dielectric layer disposed between the lower electrode and the upper electrode, and including a first metal oxide region, a second metal oxide region, and a third metal oxide region.

Semiconductor device and semiconductor apparatus including the same

A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: where Vis a capacitance boosting operating voltage, Zis impedance of the ferroelectric film, Zis impedance of the dielectric film, tis a thickness of the ferroelectric film, and Eis an electric field applied to the ferroelectric film having a maximum polarization.

Capacitor, method of controlling the same, and transistor including the same

Provided are a capacitor and a semiconductor device including the capacitor. The capacitor includes a first electrode; a plurality of dielectric films on the first electrode in a sequential series, the plurality of dielectric layers having different conductances from each other; and a second electrode on the plurality of dielectric films, wherein the capacitor has a capacitance which converges to a capacitance of one of the plurality of dielectric films.

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Hwaseong-si, South Korea

Boeun Park