Tsinghua University

Bochen Shi

Zhengming Zhao

Ye Jiang

Liqiang Yuan

Boyang Li

Kainan Chen

Tian Tan

Yicheng Zhu

Zhujun Yu

Yatao Ling

A discrete state event-driven (DSED) simulation method for simulation of a power electronic system is disclosed. With respect to continuous states and discrete events in the power electronic system, the method includes: numerical integration of the continuous states with a flexible adaptive (FA) algorithm having both variable step-size and variable order; and location of the discrete events with an event-driven (ED) mechanism, in which active events are picked out and pre-scheduled before their occurrence while passive events are located by iterative search. The proposed to DSED simulation method can achieve significant improvement in simulation efficiency, with remarkably reduced computational costs at the same level of numerical accuracy. The proposed DSED simulation method is particularly applicable for complex power electronic systems with modular combined topology and high switching frequency.

Discrete state event-driven simulation method for simulation of power electronic system

An IGBT modeling method includes creating piece-wise line functions describing a collector-emitter voltage v, a collector current iand a gate-emitter voltage vof the IGBT during a switching-on transient based on an internal structure of the IGBT and transient processes of the IGBT. The IGBT modeling method further includes creating piece-wise line functions describing the collector-emitter voltage v, the collector current iand the gate-emitter voltage vof the IGBT during a switching-off transient based on the internal structure of the IGBT and the transient processes.

IGBT modeling method and circuit simulation method

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Beijing, China

Bochen Shi