Applied Materials Israel Limited

Bobin Mathew Skaria

Boris Levant

Anirban Ghosh

Shay Attal

Yan Avniel

Gal Daniel Gutterman

Noam Tal

Tomer Haim Peled

Oz Fox-kahana

Atai Baldinger

Murad Muslimany

Erez Lidor

Nitin Singh Malik

Tal Frank

David Uliel

Bar Dubovski

There is provided a system and method for examining a semiconductor specimen. The method includes obtaining a runtime image of the specimen, and providing the runtime image as an input to an end-to-end (E2E) learning model to process, thereby obtaining, as an output of the E2E learning model, runtime measurement data specific for a metrology application. The E2E learning model is previously trained for the metrology application using a training set comprising a plurality of training images of the specimen and respective ground truth measurement data associated therewith, and one or more cost functions specifically configured to evaluate, for the plurality of training images and corresponding training measurement data outputted by the E2E learning model, one or more metrology benchmarks from a group comprising precision, correlation, and matching.

End-to-end measurement for semiconductor specimens

There is provided a system and method of examination of a semiconductor specimen, comprising: obtaining a sequence of frames of an area of the specimen acquired by an electron beam tool configured to scan the area from a plurality of directions, the sequence comprising a plurality of sets of frames each acquired from a respective direction; and registering the plurality of sets of frames and generating an image of the specimen based on result of the registration, comprising: performing, for each direction, a first registration among the set of frames acquired therefrom, and combining the registered set of frames to generate a first composite frame, giving rise to a plurality of first composite frames respectively corresponding to the plurality of directions; and performing a second registration among the plurality of first composite frames, and combining the registered plurality of first composite frames to generate the image of the specimen.

Image generation for examination of a semiconductor specimen

There is provided a system and a method comprising obtaining a sequence of a plurality of frames of an area of a specimen, wherein at least one frame of the sequence is transformed with respect to another frame, obtaining a reference frame based at least on a first frame of the sequence, determining, based on the reference frame, a reference pattern, wherein the reference pattern is informative of a structural feature of the specimen in the area, for a given frame of the sequence, determining, based on the given frame, a pattern informative of said structural feature in the area, determining data Dinformative of an amplitude of a spatial transformation between the reference pattern and the pattern, generating a corrected frame based on said pattern and Dand generating an image of the area.

Image acquisition by an electron beam examination tool for metrology measurement

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Kasturi Nagar, India

Bobin Mathew Skaria