Other

Spire Corporation

Bobby L Buchanan

Anton C Greenwald

An improved process of making a ferroelectric electronic component, such as a non-volatile RAM or an electro-optic switching array, is disclosed. The process essentially includes the separate formation of two subassemblies and then connecting them by placing one on top of the other. Electrical contacts are made by 'bumping' or other 'flip chip' techniques.

Process of making a ferroelectric electronic component and product

A junction field effect transistor is fabricated in crystalline silicon by using oppositely doped polysilicon as the gate (POSFET). The depletion region of the pn (or np) junction formed at the polysilicon/silicon interface is used as the gate electrode to modulate the current path through the silicon channel from source to drain, the source and drain contacts may either be conventional metal or polysilicon heavily doped of the same conductivity type as the single crystal silicon substrate.

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Carlisle, MA, United States of America

Bobby L Buchanan