Hil Applied Medical, Ltd.

N.t. Tao Ltd.

Intel Corporation

Boaz Weinfeld

Shmuel Eisenmann

Sagi Brink-Danan

Evgeny Papeer

Assaf Shaham

Ynon Hefets

Omer Shavit

Yair Ferber

Doron Weinfeld

Oded Gour Lavie

Qing Ma

John Heck

Tsung-Kuan Allen Chou

Quan Anh Tran

Semeon Altshuler

A chamber cross-sectional multi-stage plasma arrangement characterized by escalating charge movement towards chamber center axis through one or more escalation stages contributing to the heating of the plasma, the centering of the plasma on the chamber axis, and creating rotation of the plasma therein. Rotation of the plasma around its axis induces a self-generated magnetic field, which in turn increases plasma stability and confinement. Some of the said stages of the multi-stage arrangement may be created by physical elements and components while others may be induced or generated by externally applying magnetic and/or electric fields or their combinations and/or by injection of electrons, ions or other plasma.

High efficiency plasma creation system and method

Systems for directing a pulsed beam of charged particles include an ion source configured to produce a pulsed ion beam that includes at least one ion bunch. Such systems include an electromagnet for producing an electromagnetic field through which the pulsed ion beam travels, and an automated switch that selectively activates the electromagnet. A source of radiation triggers the automated switch, and at least one processor is configured to activate the electromagnet as the ion bunch traverses the electromagnetic field. Such systems may be useful, for example, for filtering a pulsed ion beam to select ions falling within a desired energy range and/or for providing pulsed ion radiation at desired times.

Systems and methods for directing an ion beam using electromagnets

Systems for generating a proton beam include an electromagnetic radiation beam (e.g., a laser) that is directed onto an ion-generating target by optics to form the proton beam. A detector is configured to measure a laser-target interaction property, which a processor uses to produce a feedback signal that can be used to alter the proton beam by adjusting the source of the electromagnetic radiation beam, the optics, or a relative position or orientation of the electromagnetic radiation beam to the ion-generating target. By adjusting the laser-target interaction, the feedback can be used to control properties of the proton beam, such as the proton beam energy or flux. Such systems have certain advantages, including reducing the size, complexity, and cost of machines used to generate proton beams, while also improving their speed, precision, and configurability.

Systems and methods for providing an ion beam

Systems for treating a patient using protons include a proton source configured to provide a proton beam having a plurality of proton energies and at least one processor. The at least one processor is configured to control relative movement between the proton beam and the patient in two dimensions, and to control the proton energy distribution to adjust the penetration depth of the protons in the third dimension while maintaining substantially fixed coordinates in the other two dimensions. Such treatment systems allow for shorter treatment times, higher patient throughput, more precise treatment of the desired areas, and less collateral damage to healthy tissue.

Systems for generating a proton beam include an electromagnetic radiation beam (e.g., a laser) that is directed onto an ion-generating target by optics to form the proton beam. At least one processor is configured to control the source of the electromagnetic radiation and the optics to alter the energy, polarization, spatial profile, and/or the temporal profile of the electromagnetic radiation beam, and to adjust the flux and/or energy of the proton beam. In some instances the system may adjust the proton beam energy while holding the proton beam flux substantially constant, or alternatively adjust the proton beam flux while holding the proton beam energy substantially constant. In other instances the system may adjust the proton beam energy while varying the proton beam flux, and/or adjust the proton beam flux while varying the proton beam energy.

An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

Growing community of inventors

Jerusalem, Israel

Boaz Weinfeld