Micron Technology Incorporated

Bo Zhou

Hui Calvin Yang

Hua Fang Tan

Yingying Zhu

Qilin Pan

Jingxun Eric Wu

Deping He

Tao Jiang

Guang Hu

Caixia Yang

Methods, systems, and devices for read performance techniques for time retention are described. A memory system may store data in a block of memory cells and perform a power cycle operation. Based on performing the power cycle operation, the memory system may determine a first voltage offset associated with the block of memory cells by executing a first read command using an auto-read calibration operation. Based on the first voltage offset, and, in some examples, one or more additional voltage offsets, the memory system may calculate a retention time of data stored in the block of memory cells. The memory system may adjust a read voltage based on the retention time and perform one or more additional read commands.

Read performance techniques for time retention

Methods, systems, and devices for memory block utilization in memory systems are described. A system configured to allow a memory device to group or segment a memory block into two or more sub-memory blocks, which can be independently programmed is described herein. For example, a host system may determine a configuration of a memory array, and communicate the configuration information to the memory system, and transmit a command for an operation to the memory system. In some examples, the memory system may utilize the memory array configuration information and determine to segment the blocks of memory cells into sub-blocks. By segmenting the memory block into sub-blocks, the memory device may maintain its memory block density while supporting efficient programming of blocks of the memory array.

Memory block utilization in memory systems

Methods, systems, and devices for reference voltage adjustment for word line groups are described. In some examples, one or more components of a memory system may determine a duration that data has been stored to one or more memory cells. Based on the duration, a voltage value of one or more reference voltages may be adjusted accordingly. For example, a voltage value of one or more reference voltages may be adjusted based on the duration. Moreover, the reference voltage values may be adjusted differently in response to the memory cells having stored data for a relatively longer duration, as opposed to memory cells that have stored data for a relatively shorter duration. The adjusted reference voltages may be used during a subsequent read operation. The voltage value of the one or more reference voltages may be adjusted on a word-line group by word-line group basis.

Reference voltage adjustment for word line groups

A memory device provides a memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

Memory with improved cross temperature reliability and read performance

A memory array including memory cells, a temperature sensing circuit, and a memory control unit operatively coupled to the memory array. The memory control unit includes a processor. The processor is configured to receive temperature information from the temperature sensing circuit, initiate programming of the memory cells with data using a first threshold voltage distribution when the temperature information indicates an operating temperature is in a first temperature range, and initiate programming of the memory cells with data using a second threshold voltage distribution when the temperature information indicates the operating temperature is in a second temperature range.

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Shanghai, China

Bo Zhou