Samsung Electronics Co., Ltd.

K. C. Tech Co., Ltd.

Bo Yun Kim

Seung Hoon Choi

Kuntack Lee

Hyosan Lee

Yongsun Ko

Byoungho Kwon

Kwan Sik Kim

Sang Won Bae

Il Young Yoon

Hongjin Kim

Sol Han

Dong Chan Kim

Eun Sung Seo

Sungoh Park

Boun Yoon

Wandon Kim

Dongchan Kim

Eunsung Seo

Jun Ha Hwang

Jeonghyuk Yim

Sung Pyo Lee

Chang Gil Kwon

Jaeung Koo

Kwansung Kim

Yeryung Jeon

Described herein are chemical mechanical polishing (CMP) slurry compositions, such as CMP slurry compositions for polishing an indium tin oxide (ITO) layer, along with methods of fabricating a semiconductor device using such a CMP slurry composition. The CMP slurry composition can include a polishing particle, a dispersing agent, an auxiliary oxidizing agent, and a sugar alcohol compound.

CMP slurry compositions and methods of fabricating a semiconductor device using the same

An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.

Method of manufacturing an image sensor having an etch stop layer on an insulation layer

A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.

Semiconductor device including interconnections having different structures and method of fabricating the same

Image sensor having an etch stop layer on the insulation layer

An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Etching composition

Etching composition and method of manufacturing semiconductor device using the same

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Hwaseong-si, South Korea

Bo Yun Kim