Korea Institute of Energy Research

Bo-Yun Jang

Joon-Soo Kim

Jin-Seok Lee

Joo-Seok Park

Hee-Eun Song

Sun-Ho Choi

Hee-Yeon Kim

Young-soo Ahn

Chang-Hyun Ko

Guk Hyeon Kwon

Hui-Chan Moon

Sung-Soon Park

Jeong-Chul Lee

Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.

Silicon ingot slicing apparatus using microbubbles and wire electric discharge machining

The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

Method of producing high purity SiOx nanoparticles with excellent volatility and apparatus for producing the same

Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

Silicon wafer slicing device using wire discharge machining

There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.

Manufacturing apparatus of high purity MOx nanostructure and method of manufacturing the same

Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.

SiOx nanoparticle manufacturing apparatus including crucible for silicon melting having sliding type tapping structure and manufacturing method of SiOx nanoparticle using the same

Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.

Method of forming nitrogen-doped porous graphene envelope

An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Apparatus for producing silicon nanoparticle using inductive coupled plasma

The present disclosure provides &#x3b1;-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of CaReAlSiON(Re is a rare-earth element, 0&#x2266;x&#x2266;0.2, 2.6&#x2266;y&#x2266;3.0, and 0.6&#x2266;a&#x2266;0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of CaReAlSiON.

Aluminum deficient &#x3b1;-SiAlON phosphors, method of preparing the same, and LED chip package using the same

The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Apparatus for manufacturing single crystal silicon ingot having reusable dual crucible for silicon melting

Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs.

Apparatus for preparing silicon nanoparticle using ICP

The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions

The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.

Growing community of inventors

Daejeon, South Korea

Bo-Yun Jang