Qualcomm Incorporated

Apple Inc.

Skyworks Solutions, Inc.

Bo Yu

Bin Yang

Stanley Seungchul Song

Periannan Chidambaram

Jun Yuan

Reza Jalilizeinali

Giridhar Nallapati

Bo Pan

Lixin Ge

Patrick Isakanian

Alvin Leng Sun Loke

Nitesh Singhal

Stephen Thilenius

Jie Deng

Kefei Wu

Phi Nguyen Dang

Hyeong Tae Jeong

Jiefeng Jeff Lin

Stephen Clifford Thilenius

Power amplifier supply networks with harmonic terminations are disclosed. In certain embodiments, a power amplifier system includes a first power amplifier that amplifies a first radio frequency (RF) signal of a first fundamental frequency, a second power amplifier that amplifies a second RF signal of a second fundamental frequency, and a power amplifier supply network that distributes a power amplifier supply voltage to the first power amplifier at a first distribution node and to the second power amplifier at a second distribution node. The power amplifier supply network includes a first harmonic termination circuit connected to the first distribution node that provide an open circuit at about twice the first fundamental frequency, and a second harmonic termination circuit connected to the second distribution node and that provides an open circuit at about twice the fundamental frequency.

Power amplifier supply networks with harmonic terminations

Wireless circuitry can have an antenna connected to a transmitting amplifier and a receiving amplifier. The wireless circuitry may be operable in a transmit mode during which only the transmitting amplifier is active and in a receive mode during which only the receiving amplifier is active. The transmitting amplifier may be connected to the antenna via a balun and a radio-frequency coupler without an intervening switch that is enabled during the transmit mode and disabled during the receive mode. The transmitting amplifier may include input transistors, cascode transistors, first switches configured to selectively decouple gate terminals of the cascode transistors from a bias voltage, output capacitors, and second switches configured to selectively decouple the output capacitors from a ground line. The first and second switches are turned on during the transmit mode and are turned off during the receive mode to increase an output impedance of the transmitting amplifier.

Radio-frequency amplifier circuitry with improved transmit and receive performance

Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs) are disclosed. One or more metal resistors are fabricated in a MOL layer in the IC adjacent to an active semiconductor area to sense ambient temperature in the adjacent active semiconductor area. Voltage of the metal resistor will change as a function of ambient temperature of the metal resistor, which can be sensed to measure the ambient temperature around devices in the active semiconductor layer adjacent to the metal resistor. By fabricating a metal resistor in the MOL layer, the metal resistor can be localized adjacent and close to semiconductor devices to more accurately sense ambient temperature of the semiconductor devices. The same fabrication processes used to create contacts in the MOL layer can be used to fabricate the metal resistor.

Middle-of-line (MOL) metal resistor temperature sensors for localized temperature sensing of active semiconductor areas in integrated circuits (ICs)

An electronic circuit and methods of operating the electronic circuit are provided. The electronic circuit includes a pull-up transistor for pulling up an input/output (I/O) node of the output circuit to a first voltage and a first isolation transistor for coupling the pull-up transistor to the I/O node. The electronic circuit also includes a pull-down transistor for pulling down the I/O node to a second voltage and a second isolation transistor for coupling the pull-down transistor to the I/O node. In the electronic circuit, the pull-up and the pull-down transistors are transistors supporting a first drain-to-source voltage and a first gate-to-source voltage, while the first and the second isolation transistors are transistors supporting the first drain-to-source voltage and a second gate-to-source voltage greater than the first gate-to-source voltage.

Transistors configured for gate overbiasing and circuits therefrom

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San Diego, CA, United States of America

Bo Yu