Hynix Semiconductor Inc.

Samsung Sds Co., Ltd.

Zigbang Co., Ltd.

Bo Youn Kim

Sang Hak Lee

Jong Hang Kim

Seong Jong Ha

Sun Ah Kang

Young Min Shin

Yeon Hee Kwon

Yu Ri Ahn

An apparatus for retraining an object detector according to an exemplary embodiment includes an inputter configured to receive an undetected image, a style transferer configured to generate one or more first augmented images that have the same content attribute as an object area of the undetected image, but a different style attribute, a content transferer configured to generate one or more second augmented images that have the same style attribute as the object area, but a different content attribute, and an influence analyzer configured to analyze a cause of non-detection of the undetected image by comparing object detection reliabilities of the undetected image, the first augmented image, and the second augmented image.

Apparatus and method for retraining object detection using undetected image

Provided is a machine learning-based object detection method performed by an object detection apparatus. the method comprises constructing an object detection model by performing machine learning on a training image set, wherein the object detection model is a model for detecting a target object in an input image based on the result of comparing a confidence score for the target object with a threshold value, obtaining an input image given a detection result for the target object, wherein the obtained input image is an image not included in the training image set, predicting one or more object regions, in which the target object exists, in the obtained input image by using the object detection model, classifying a region not matching the detection result among the predicted object regions as a false detection region; and adjusting the threshold value of the object detection model based on a confidence score of the false detection region.

Machine learning-based object detection method and apparatus

According to a first aspect of the present invention, a method for setting a region of interest may include: detecting a mark in an image frame photographed by a camera; and setting a region of interest using the detected mark.

Method and apparatus for setting region of interest

An SOI device includes an SOI substrate having a stacked structure including a buried oxide layer and a first silicon layer sequentially stacked on a silicon substrate. The SOI substrate possesses grooves having a depth that extends from an upper surface of the first silicon layer to a partial depth of the buried oxide layer. An insulation layer is formed on the lower surfaces of the grooves and a second silicon layer is formed filling the grooves having the insulation layer formed thereon. Gates are formed on the second silicon layer and junction regions are formed in the first silicon layer on both sides of the gates to contact the insulation layer.

SOI device having an increasing charge storage capacity of transistor bodies and method for manufacturing the same

An SOI device includes an SOI substrate composed of a stack structure of a silicon substrate, a buried oxide layer, and a silicon layer. Grooves are defined in the silicon layer each exposing the buried oxide layer. A barrier layer is formed on the lower portion of the sidewall of each of the grooves. An epi-silicon layer is formed to fill the grooves and cover the barrier layer. Gates are formed on the epi-silicon layer, and junction areas are formed in the silicon layer on both sides of the gates.

SOI device with improved storage capacity and method for manufacturing the same

To improve the refresh characteristics of a semiconductor device, a gate oxide layer comprising a first oxide layer and a second oxide layer are formed on the substrate. A portion of the second oxide layer is isotropically etched using a photoresist layer pattern. A gate is formed by sequentially forming a gate conductive layer and a hard mask layer on the second oxide layer, and sequentially etching the hard mask layer, the gate conductive layer, the second oxide layer and the first oxide layer. Due to isotropic etching of the second oxide layer, the portion of the gate oxide layer corresponding to the center portion of the channel gate is thinner than the other portion of the gate oxide layer correspond to an edge of the channel gate.

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Seoul, South Korea

Bo Youn Kim