University of Electronic Science and Technology of China

Bo Yan

Yi He

Han Wang

Yong Zhang

Haomiao Wei

Ruimin Xu

Zhuoling Xiao

Chengkai Wu

Xinguo Yu

A pedestrian adaptive zero-velocity update point selection method based on a neural network, including the following steps: S, collecting inertial navigation data of different pedestrians in different motion modes; S, preprocessing the inertial navigation data collected in the step S, labeling the preprocessed data, and obtaining a training data set, a validation data set, and a test data set according to the preprocessed data and a label corresponding to the preprocessed data; S, inputting the training data set to a convolutional neural network for training, obtaining a pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and using the validation data set to validate the pedestrian adaptive zero-velocity update point selection model; and S, inputting the test data set into the pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and obtaining a selection result of pedestrian zero-velocity update points.

Pedestrian adaptive zero-velocity update point selection method based on a neural network

A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.

Double Schottky-barrier diode

Growing community of inventors

Chengdu, China

Bo Yan