National Sun Yat-sen University of Kaohsiung

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Museum of Marine Biology & Aquarium

Bo-Wei Chen

Ting-Chang Chang

Kuan-Chang Chang

Zhi-Hong Wen

Tsung-Ming Tsai

Chao-Chi Chen

Jyh-Horng Sheu

Ping-Jyun Sung

Chih-Cheng Shih

Wei-Hsien Wang

Shi Sheng Hu

Shun Chi Tsai

Yi Ting Liao

Chung-I Yang

The present disclosure describes a semiconductor structure with a metal ion capture layer and a method for forming the structure. The method includes forming a first fin structure and a second fin structure on a substrate and forming a first gate structure over the first fin structure and a second gate structure over the second fin structure, where the first gate structure adjoins the second gate structure. The method further includes forming a dielectric layer on the first and second gate structures, removing a portion of the dielectric layer above an adjoining portion of the first and second gate structures to form an opening, and forming a metal ion capture layer in the opening.

Semiconductor structure with metal ion capture layer

A provided method includes: obtaining a predictor matrix having at least one masked attribute; obtaining a response matrix; setting that the predictor matrix is approximated by a product of a basis matrix and a coefficient matrix; setting that the response matrix is approximated by a product of a weight matrix, a projection matrix and the predictor matrix; setting that the basis matrix, the coefficient matrix, the weight matrix, and the projection matrix are nonnegative; setting that the projection matrix, the weight matrix, or a product of the projection matrix and the predictor matrix is orthogonal, and thus setting a cost function; and calculating the basis matrix, the coefficient matrix, the weight matrix, and the projection matrix according to the cost function. Accordingly, operations of imputation, fitting, and subspace analysis can be performed.

Privacy-preserving predicting method and electrical device

A method for increasing the luminous intensity of an ultraviolet light emitting diode includes heating an ultraviolet light emitting diode to a working temperature, and supplying electricity to the ultraviolet light emitting diode at the working temperature to make the ultraviolet light emitting diode emit ultraviolet light. An apparatus for increasing the luminous intensity of an ultraviolet light emitting diode includes a substrate, an ultraviolet light emitting diode mounted on the substrate, an electric heater mounted on the substrate, a temperature sensor, and a controller electrically connected to the ultraviolet light emitting diode, the electric heater, and the temperature sensor. The controller can heat the ultraviolet light emitting diode through the substrate. When the temperature sensor detects that the temperature of the ultraviolet light emitting diode reaches a working temperature, the controller supplies electricity to the ultraviolet light emitting diode to make the ultraviolet light emitting diode emit ultraviolet light.

Method and apparatus for increasing luminous intensity of an ultraviolet light emitting diode

The invention relates to compounds from the soft coral and the generation thereof. The invention also relates to the uses of the compounds from the soft coral in inhibiting inducible nitric oxide synthase and/or cyclooxygenase-2 and in treating the diseases associated with inducible nitric oxide synthase and/or cyclooxygenase-2.

Compounds from soft coral, method of preparation and pharmaceutical uses thereof

Growing community of inventors

Kaohsiung, Taiwan

Bo-Wei Chen