Tunghsu Group Co., Ltd.

The 13th Research Institute of China Electronics

Shijiazhuang Wulong Brake Corporation

Bo Wang

Qing Ql Li

Zhihong Feng

Guangtao Zhang

Dongcheng Yan

Lihong Wang

Junfeng Wang

Quan Zheng

Jia Li

Yulong Fang

Wulin Han

Zhiyong Li

Dejun Cui

Zhengfang Han

Guoqi Liu

Weili Lu

Xiangle Qiao

Yan Zhao

Jiayun Yin

Yanmin Guo

Zhirong Zhang

Qing Li

The present application relates to a drum brake, which includes a brake arm; a brake shoe; a base; and a brake torque detection device; the brake shoe is hinged on the brake arm through a brake shoe shaft, the brake arm is provided with a shaft hole penetrating through the brake shoe shaft, and the shaft hole is an oblong shaft hole, and a hole wall at one side of the oblong shaft hole is provided with a wear-resistant strip configured for pressing against the brake shoe shaft during braking of the drum brake; the brake torque detection device includes a sensing plate and a tension and compression sensor arranged on the sensing plate; one end of the sensing plate is connected to the brake shoe shaft, and the other end of the sensing plate is connected to the brake arm.

Drum brake

The present disclosure relates to glass manufacturing, a glass composition, glass with a low inclusion content and a preparation method therefor and use thereof. The composition comprises 50-64 wt. % SiO, 14-24 wt. % AlO, 0-7 wt. % BO+PO, 0.5-7 wt. % MgO, 1-10 wt. % CaO, 0-9 wt. % SrO, 0.1-14 wt. % BaO, 0.1-5 wt. % ZnO, 0.1-4 wt. % TiO, 0.1-7 wt. % YO+LaO+NdO, and &#x3c;0.05 wt. % RO, wherein RO is a sum of the content of LiO, NaO and KO, and the composition satisfies the following conditions: (1) a temperature Tcorresponding to a viscosity of 100 P is 1730&#xb0; C. or higher; (2) a surface tension at 1300&#xb0; C. is less than 420 mN/m. The glass prepared by the glass composition and the glass with a low inclusion content preparation method has the advantages of having low inclusion content, having a simple preparation process, being low in cost and so on.

Glass composition, low inclusion content glass, preparation method therefor and application thereof

The disclosure provides a method for passivating a silicon carbide epitaxial layer, relating to the technical field of semiconductors. The method includes the following steps: introducing a carbon source and a silicon source into a reaction chamber, and growing a silicon carbide epitaxial layer on a substrate; and turning off the carbon source, introducing a nitrogen source and a silicon source into the reaction chamber, and growing a silicon nitride thin film on an upper surface of the silicon carbide epitaxial layer. The silicon nitride thin film grown by the method has few defects and high quality, and may be used as a lower dielectric layer of a gate electrode in a field effect transistor. It does not additionally need an oxidation process to form a SiOdielectric layer, thereby reducing device fabrication procedures.

Method for passivating silicon carbide epitaxial layer

Growing community of inventors

Shijiazhuang, China

Bo Wang