Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Bo-Sung Kim

Yong-Uk Lee

Keun-Kyu Song

Tae-Young Choi

Mun-Pyo Hong

Jang-Kun Song

Kwan-Wook Jung

Jung-Ho Lee

Seung-Hwan Cho

Yong-Woo Choi

Joong-Hyun Mun

Hyo-Rak Nam

Young-Min Kim

Joon-hak Oh

Mun-pyo Hong

Min-Seong Ryu

Woo-Jae Lee

Jung-Hun Noh

Seong-Sik Shin

Kang-Moon Jo

Kyu-Young Kim

Hee-Deog Kim

Nam-Ok Jung

Seon-Pil Jang

Youn-Gu Lee

Jong-Kyun Shin

Yeon-Taek Jeong

Hyung-Chul Jung

Jun-Young Lee

Je-Hun Lee

Sung-wook Kang

Young-min Kim

Jung-Han Shin

Ju-Han Bae

Min-Ho Yoon

Soo-Jin Kim

Doo-Na Kim

Sang-Gab Kim

Hong-Sick Park

Young-Chol Yang

Seung-jun Lee

Hi-Kuk Lee

Jun-Ho Song

Soo-Guy Rho

Hyun-Jae Kim

Young-Soo Yoon

Jung-mok Bae

Sung-Chul Kang

Joon-Hak Oh

Chang-Hoon Kim

Masataka Kano

Hee-Hwan Choe

Bo-Kyoung Ahn

Jong-Hyun Seo

Hyun-Soo Lim

Doo-Hyoung Lee

You-Seung Rim

Eun-Hye Park

Dong-Lim Kim

Kwang-Yeol Lee

See-Won Kim

Seung-Hee Yu

Nam-Seok Rho

Jong-Uk Lee

A method and an apparatus are provided for preventing battery power consumption and degradation of system performance due to the system resources being utilized by applications being executed, while providing a multi-tasking function through a plurality of applications. In the method, when a plurality of applications are executed, such execution of the plurality of applications is reported to the user, so as to enable the user to terminate one or more applications, thereby preventing unnecessary consumption of battery power.

Method and apparatus for managing an application being executed in a portable terminal

A touch substrate includes a base substrate, a common electrode and a wire electrode. The base substrate has a plurality of common electrode areas. A common electrode is disposed in each of the common electrode areas. The common electrode has a plurality of first electrode lines extended in a first direction and arranged in a second direction crossing the first direction and a plurality of second electrode lines arranged in the first direction. The wire electrode is connected to an end of the common electrode to apply a voltage to the common electrode. The common electrode and the wire electrode are simultaneously formed through a same process using a printing substrate.

Touch substrate, method of manufacturing the same and display device having the same

A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode electrically connected to the pixel electrode through a contact hole. A spacer is formed on the first signal line of the first insulating substrate, and is wider at a first portion close to the first insulating substrate than at a second portion close to the second insulating substrate, and the drain electrode comprises a first portion and a second portion extending in a different direction with respect to the first portion.

Liquid crystal display including a variable width spacer element and method for fabricating the same

According to a method of manufacturing a thin film transistor substrate, a composition including a metal oxalate and a solvent for manufacturing an oxide semiconductor is coated to form a thin film, the thin film is annealed, and the thin film is patterned to form a semiconductor pattern.

Composition for manufacturing oxide semiconductor and method for manufacturing thin-film transistor substrate using the same

A method of manufacturing a nano-rod and a method of manufacturing a display substrate in which a seed including a metal oxide is formed. A nano-rod is formed by reacting the seed with a metal precursor in an organic solvent. Therefore, the nano-rod may be easily formed, and a manufacturing reliability of the nano-rod and a display substrate using the nano-rod may be improved.

Method of manufacturing a nano-rod and method of manufacturing a display substrate

In a method of manufacturing a thin film transistor, a gate electrode is formed on a first surface of a base substrate, a oxide semiconductor layer, insulation layer and photo resist layer are formed an the fast surface of the base substrate having the gate electrode. The insulation layer and the oxide semiconductor layer are patterned using a first photo resist pattern to form an etch-stopper and an active pattern. A source and a drain electrode are formed on the base substrate having the active pattern and the etch-stopper, the source electrode and the drain electrode are overlapped with both ends of the etch-stopper and spaced apart from each other. Therefore, a manufacturing cost may be decreased by omitting a mask when forming the active pattern and the etch-stopper.

Method of manufacturing a thin-film transistor, method of manufacturing a display substrate, and display substrate

A thin-film transistor substrate includes a gate line, and a gate electrode connected to the gate line, on a base substrate; an insulating layer on the gate electrode, the insulating layer including a first part and a second part, the first part having a hydrophobic property and the second part having a hydrophilic property; a data line extended in a different direction from the gate line, and a source electrode connected to the data line and on the second part of the insulating layer; a drain electrode on the second part of the insulating layer, the drain electrode spaced apart from the source electrode; a semi-conductor pattern overlapping the source electrode, the drain electrode and a gap between the spaced apart source and drain electrodes, where the semi-conductor pattern exposes the first part of the insulating layer; and a pixel electrode in contact with the drain electrode.

Thin-film transistor substrate and method of manufacturing the same

A display substrate includes a base substrate, a data line, a gate line, a switching element, a self assembled monolayer (SAM) and a pixel electrode. The data line is formed on the base substrate. The gate line is formed across the data line. The switching element includes a source electrode electrically connected to the data line, a drain electrode spaced apart from the source electrode, a semiconductor pattern covering the source and drain electrodes, and a gate electrode electrically connected to the gate line and facing the semiconductor pattern. The SAM is disposed around the semiconductor pattern and a conductive pattern including the data line. The pixel electrode is electrically connected to the switching element.

Display substrate and method of manufacturing the same

A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.

A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode electrically connected to the pixel electrode through a contact hole. A spacer is formed on the first signal line of the first insulating substrate, and is wider at a first portion close to the first insulating substrate than at a second portion close to the second insulating substrate.

Liquid crystal display including a variable width spacer element

A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.

Thin film transistor array panel and manufacturing method thereof

The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.

Liquid crystal display and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Bo-Sung Kim