Samsung Sdi Co., Inc.

Cheil Industries Inc.

Bo-Sun Kim

Jin-Hee Bae

Taek-Soo Kwak

Han-Song Lee

Byeong-Gyu Hwang

Wan-Hee Lim

Eun-Su Park

Yoong-Hee Na

Jin-Woo Seo

Jun-Young Jang

Kwen-Woo Han

Sae-Mi Park

Sang-Kyun Kim

Hyun-Ji Song

Youn-Jin Cho

Hui-Chan Yun

Go-Un Kim

Woo-Han Kim

Seung-Hee Hong

Sang-Hak Lim

Mi-young Kim

Il Yong Jung

Sang-Ran Koh

Eun-Seon Lee

Kun-Bae Noh

Bong-Hwan Kim

Jun Sakong

Sun-Hae Kang

Jin-Gyo Kim

Jong-Dae Jeon

A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25&#xb0; C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Composition for forming a silica based layer, silica based layer, and electronic device

A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Composition for forming a silica based layer, method for manufacturing silica based layer, and electronic device including the silica based layer

A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Composition for forming silica layer, silica layer, and electronic device

A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 &#x3bc;m to about 1 &#x3bc;m is less than or equal to about 10/ml.

Composition for forming silica based layer, and method for manufacturing silica based layer

Disclosed is modified hydrogenated polysiloxazane prepared by reacting hydrogenated polysiloxazane with a silane compound selected from polysilane, polycyclosilane, and a silane oligomer. The modified hydrogenated polysiloxazane has a small mole ratio of nitrogen atoms relative to silicon atoms and may remarkably deteriorate a film shrinkage ratio when included in a composition for forming a silica-based insulation layer to form a silica-based insulation layer.

Modified hydrogenated polysiloxazane, composition comprising same for forming silica-based insulation layer, method for preparing composition for forming

A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1: 

Rinse liquid for insulating film and method of rinsing insulating film

A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.

Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent

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Suwon-si, South Korea

Bo-Sun Kim