Samsung Electronics Co., Ltd.

Tae-won Noh

Bo-soo Kang

Young-soo Park

Chang-bum Lee

Seung-eon Ahn

Myoung-jae Lee

Ki-hwan Kim

Xianyu Wenxu

Chang-jung Kim

Ki-Hwan Kim

Young-Bae Kim

Sang-min Shin

Seung-ryul Lee

Yong-kyun Lee

Stefanovich Genrikh

Myung-jae Lee

Jong-gul Yoon

Sang-Don Bu

Bae-ho Park

Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes: a memory array on a first substrate; and a peripheral circuit on a second substrate, wherein the first substrate and the second substrate may be attached to each other so that the memory array and the peripheral circuit are electrically connected to each other.

Semiconductor device and method of manufacturing the same

A resistive memory device includes a first electrode and a first insulation layer arranged on the first electrode. A portion of the first electrode is exposed through a first hole in the first insulation layer. A first variable resistance layer contacts the exposed portion of the first electrode and extends on the first insulation layer around the first hole. A first switching device electrically connects to the first resistive switching layer.

Resistive memory devices and methods of manufacturing the same

Provided are a non-volatile memory device and a cross-point memory array including the same which have a diode characteristic enabling the non-volatile memory device and the cross-point memory array including the same to operate in a simple structure, without requiring a switching device separately formed so as to embody a high density non-volatile memory device. The non-volatile memory device includes a first electrode; a diode-storage node formed on the first electrode; and a second electrode formed on the diode-storage node.

Non-volatile memory device including diode-storage node and cross-point memory array including the non-volatile memory device

Example embodiments relate to a heterojunction diode, a method of manufacturing the heterojunction diode, and an electronic device including the heterojunction diode. The heterojunction diode may include a first conductive type non-oxide layer and a second conductive type oxide layer bonded to the non-oxide layer. The non-oxide layer may be a Si layer. The Si layer may be a p++ Si layer or an n++ Si layer. A difference in work functions of the non-oxide layer and the oxide layer may be about 0.8-1.2 eV. Accordingly, when a forward voltage is applied to the heterojunction diode, rectification may occur. The heterojunction diode may be applied to an electronic device, e.g., a memory device.

Heterojunction diode, method of manufacturing the same, and electronic device including the heterojunction diode

Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal.

Resistive random access memory device and methods of manufacturing and operating the same

Provided are a diode structure and a memory device including the same. The diode structure includes: a first electrode; a p-type Cu oxide layer formed on the first electrode; an n-type InZn oxide layer formed on the p-type Cu oxide layer; and a second electrode formed on the n-type InZn oxide.

Diode structure and memory device including the same

A ferroelectric capacitor and a method for manufacturing the same includes a lower electrode, a dielectric layer, and an upper electrode layer, which are sequentially stacked, wherein the dielectric layer has a multi-layer structure including a plurality of sequentially stacked ferroelectric films, and wherein two adjacent ferroelectric films have either different compositions or different composition ratios. Use of a ferroelectric capacitor according to an embodiment of the present invention, it is possible to hold stable polarization states of ferroelectric domains for a long retention time, and thus data written in the ferroelectric capacitor a long time ago can be accurately written, thereby improving the reliability of a ferroelectric random access memory (FRAM).

Ferroelectric capacitor and method for manufacturing the same

A nonvolatile ferroelectric capacitor comprising Bi,A,Ti,O,thin film which is obtained by substituting at least some atoms of nonvolatile element A such as La for volatile Bi atoms in Bi,Ti,O,. Nonvolatile element A in perovskite layer of B,A,Ti,O,suppress the generation of oxygen vacancies in the perovskite layer, thereby improving fatigue behavior.

Growing community of inventors

Seoul, South Korea

Bo-soo Kang