Gree Electric Appliances, Inc. of Zhuhai

Edgeless Semiconductor Co., Ltd. of Zhuhai

Bo Shi

Dan Zeng

Daokun Chen

Wei Jiang

Yingjiang Ma

Yiren Lin

Libo Ao

Saichang Liang

Jun Cao

Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transistor includes first and second cells which jointly include a drain electrode layer, an ohmic contact layer, a substrate layer, an epitaxial layer, an interlayer dielectric layer, and a source electrode layer, the first cell further includes a first deep well region, a second deep well region, a first shallow well region, a second shallow well region, a two first source region, a two second source region, a first gate oxide layer, and a first polysilicon gate, and the second cell further includes a third deep well region, a fourth deep well region, a third shallow well region, a fourth shallow well region, a second gate oxide layer, a third gate oxide layer, a second polysilicon gate, and a third polysilicon gate.

Silicon carbide metal oxide semiconductor field effect transistor and manufacturing method of silicon carbide metal oxide semiconductor field effect transistor

The present disclosure relates to a field of chip technology, and discloses a three-phase inverter power chip and a preparation method therefor. The preparation method includes: forming active areas on a substrate and an isolation area located outside the active areas; forming a source electrode, a drain electrode and a gate electrode of a transistor in each active area; forming a first bond pad, second bond pads, third bond pads and fourth bond pads in the isolation area; the source electrode, the drain electrode and the gate electrode of the chip being extended to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto; and electrically connecting the source electrode, the drain electrode and the gate electrode of the transistor to the first bond pad, the second bond pads, the third bond pads or the fourth bond pads corresponding thereto.

Three-phase inverter power chip and preparation method therefor

The present disclosure discloses a trench Insulated Gate Bipolar Transistor (IGBT) packaging structure and a method for manufacturing the trench Insulated Gate Bipolar Transistor packaging structure. The trench IGBT packaging structure includes: a trench IGBT, which includes an emitting electrode metal layer, and a trench gate electrode; a lead frame, which includes a chip placement area and an emitting electrode lead-out end; a first bonding wire connecting the emitting electrode metal layer and an emitting electrode pin. One end of the first bonding wire is connected to a surface, away from the trench gate electrode, of the emitting electrode metal layer to form a strip-shaped first solder joint, the other end is connected to the emitting electrode lead-out end to form a second solder joint, and an extension direction of the first solder joint is perpendicular to an extension direction of the trench of the trench gate electrode.

Trench insulated gate bipolar transistor packaging structure and method for manufacturing the trench insulated gate bipolar transistor

Growing community of inventors

Zhuhai, China

Bo Shi