Silicon Optronics, Inc.

Bo-Ray Lee

Ming-Xiang Li

Yen-Chen Chang

An image-sensing device is provided. The image-sensing device includes a substrate, a light-sensing element, a first dielectric layer, a light-guiding structure, and a patterned conductive layer. The light-sensing element is disposed in the substrate. The first dielectric layer is disposed on the first side of the substrate. The light-guiding structure is disposed in the first dielectric layer. The patterned conductive layer is disposed between the light-sensing element and the light-guiding structure. In addition, the patterned conductive layer includes a subwavelength structure. An image-sensing system including the above image-sensing device is also provided.

Image sensing device and image-sensing system

An image sensing device is provided. The image sensing device includes a substrate, a plurality of photosensitive elements, a dielectric layer, a reflector, a color filter, and a microlens structure. The substrate has a first pixel and a second pixel adjacent to the first pixel, and the substrate has a front side and a back side opposite the front side. The photosensitive elements are disposed in the substrate. The dielectric layer is disposed on the back side of the substrate. The reflection is disposed on the front side of the substrate and has a parabolic surface. The color filter layer is disposed on the dielectric layer. The microlens structure is disposed on the color filter layer.

Image sensing device and method of forming the same

A global shutter CMOS image sensor includes a photodiode, a floating diffusion region, and a storage diode disposed in the upper portion of the substrate. The storage diode is disposed between the photodiode and the floating diffusion region. A first transfer gate is disposed on the substrate between the photodiode and the storage node. A second transfer gate is disposed on the substrate between the storage diode and the floating diffusion region. A first dielectric layer is disposed on the substrate and covers the first transfer gate and the second transfer gate. A light-shielding layer is disposed on the first dielectric layer. A light pipe is disposed through the light-shielding layer and a portion of the first dielectric layer, and is correspondingly disposed above the photodiode. The light pipe has a higher refractive index than the first dielectric layer.

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Hsinchu, Taiwan

Bo-Ray Lee