Samsung Electronics Co., Ltd.

Industry-University Cooperation Foundation Sogang University

Bo-ra Lim

Geum-jung Seong

Seung-hun Lee

Seung-joon Yang

Jeong-yun Lee

Sung-hee Kim

Rae-Hong Park

Edward Namkyu Cho

Ji-Won Lee

Jun-young Kim

Hyun-Seung Lee

Ah-reum Ji

Edward Nam-kyu Cho

Tae-soon Kwon

A semiconductor device includes a substrate having a fin active region pattern having a protruding shape, a device isolation layer pattern covering a side surface of a lower portion of the fin active region pattern, a spacer pattern covering a side surface of a portion of the fin active region pattern that protrudes from a top surface of the device isolation layer pattern, and a source/drain region in contact with a top surface of the fin active region pattern and a top surface of the spacer pattern.

Finfet with various shaped source/drain regions

An integrated circuit device includes: a first fin active region extending in a first direction parallel to a top surface of a substrate; a second fin active region extending in the first direction and spaced apart from the first fin active region in a second direction different from the first direction; a gate line intersecting the first and second fin active regions; a first source/drain region on one side of the gate line in the first fin active region; and a second source/drain region on one side of the gate line in the second fin active region and facing the first source/drain region, wherein a cross-section of the first source/drain region perpendicular to the first direction has an asymmetric shape with respect to a center line of the first source/drain region in the second direction extending in a third direction perpendicular to the top surface of the substrate.

Integrated circuit device including asymmetrical fin field-effect transistor

A semiconductor device includes: a fin-type active region protruding from a substrate and extending in a first direction; at least one nano-sheet spaced apart from an upper surface of the fin-type active region and facing the upper surface of the fin-type active region, the at least one nano-sheet having a channel region; a gate extending on the fin-type active region in a second direction crossing the first direction and surrounding at least a portion of the at least one nano-sheet; a source/drain region on the fin-type active region on both sides of the at least one nano-sheet; and a source/drain protection layer on a sidewall of the at least one nano-sheet and between the source/drain region and the at least one nano-sheet.

Semiconductor device

Provided are an image processing method and apparatus for enhancing contrast. The image processing apparatus includes a determination unit that determines whether contrast enhancement processing should be performed on an input image; an intensity mapping unit that generates a plurality of images having different exposure times from the input image, using intensity mapping, if the contrast enhancement processing should be performed on the input image; and an image composition unit that composes the plurality of images into a composed image. Therefore, it is possible to reduce a color change or a false contour phenomenon that are generated in a related art contrast enhancement process.

Image processing method and apparatus for contrast enhancement using intensity mapping

A method of improving picture quality in a composite video burst signal includes dividing the composite video burst signal into a plurality of frequency bands using a low pass filter and a high pass filter, performing wavelet packet filtering of frequency bands including a chrominance signal having energy higher than a specified threshold among the plurality of frequency bands, and performing Wiener filtering of frequency bands including a chrominance signal having energy lower than a specified threshold.

Method and apparatus for improving quality of composite video signal and method and apparatus for removing artifact of composite video signal

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Seoul, South Korea

Bo-ra Lim