Samsung Electronics Co., Ltd.

Bo-Kyeong Kang

Bo-un Yoon

Ho-young Kim

Si-Young Choi

Myeong-Cheol Kim

Cheol Kyu Kim

Byoung-ho Kwon

Yong-Joon Choi

Jae-Kwang Choi

Geum-jung Seong

Hee-Don Jeong

Se-jung Park

Ji-Eun Han

Suk-Hoon Jeong

Jae-seok Kim

Il-Young Yoon

Chang-Sun Hwang

Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.

Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device includes forming a pre-isolation layer covering a fin formed on a substrate, the pre-isolation layer including a lower pre-isolation layer making contact with the fin and an upper pre-isolation layer not making contact with the fin, removing a portion of the upper pre-isolation layer by performing a first polishing process, and planarizing the pre-isolation layer such that an upper surface of the fin and an upper surface of the pre-isolation layer are coplanar by performing a second polishing process for removing the remaining portion of the upper pre-isolation layer.

Method for fabricating a semiconductor device

In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film.

Method for fabricating semiconductor device and device using same

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Seoul, South Korea

Bo-Kyeong Kang