Korea Research Institute of Chemical Technology

Bo Keun Park

Jeong Hwan Han

Young Ki Lee

Jong Cheol Lee

Sang Jin Moon

Won Suk Shin

Dong Ju Jeon

Won Wook So

Sang Kyu Lee

Taek-Mo Chung

Chang Gyoun Kim

Chang Eun Song

Ki Jeong Kong

Gun Hwan Kim

Taek Mo Chung

Ji Woon Choi

Ji Hyeun Nam

Muhammad Jahandar

Eun Ae Jung

A novel metal precursor having improved thermal stability and volatility is provided. Also provided herein are: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.

Metal precursor for making metal oxide

There are provided a variable resistance memory device and an operating method thereof. In a method for operating a variable resistance memory device, the method includes programming multi-bit data in a multi-bit variable resistance memory cell of the variable resistance memory device, wherein the programming includes: generating sequentially increased program voltage pulses, based on the multi-bit data; and applying the program voltage pulses to the multi-bit variable resistance memory cell, wherein a current-voltage curve of the multi-bit variable resistance memory cell exhibits a self-compliance characteristic, wherein the program voltage pulses are included in a voltage section having the self-compliance characteristic.

Variable resistance memory device and operating method thereof

Provided are a mixed metal halide perovskite compound, and an electronic device including the same, wherein the mixed metal halide perovskite compound includes an organic cation, two or more kinds of metal cations, and a halogen anion.

Mixed metal halide perovskite compound and semiconductor device including the same

Growing community of inventors

Daejeon, South Korea

Bo Keun Park