Industrial Technology Research Institute

Bo-Kai Chao

Chao-Ta Huang

Yu-Wen Hsu

Chih-hao Hsu

Jui-Hung Tsai

Ying-Hao Wang

Lu-Pu Liao

A microneedle electroporation device is provided, including a housing, a positioning member, an intermediate plate, a first microneedle assembly, a second microneedle assembly, a socket, a first wire, and a second wire. The positioning member is connected to the housing and the intermediate plate. The intermediate plate includes a plurality of first holes and a plurality of second holes. The first microneedle assembly includes a plurality of first microneedles and a first metal connecting portion connected to the first microneedles. The first microneedles pass through the first holes. The second microneedle assembly includes a plurality of second microneedles and a second metal connecting portion connected to the second microneedles. The second microneedles pass through the second holes. The first microneedle assembly and the second microneedle assembly are electrically independent of each other. The first wire connects the socket to the first metal connecting portion. The second wire connects the socket to the second metal connecting portion.

Microneedle electroporation device

A vertically integrated micro-bolometer includes an integrated circuit chip, an infrared sensing film, and a metal bonding layer. The integrated circuit chip includes a silicon substrate, a circuit element, and a dielectric layer disposed on the silicon substrate. The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer. The sensing layer is disposed between the top absorbing layer and the bottom absorbing layer. Materials of the top absorbing layer, the sensing layer, and the bottom absorbing layer are materials compatible with a semiconductor manufacturing process. The metal bonding layer connects the dielectric layer on the silicon substrate in the integrated circuit chip and the bottom absorbing layer of the infrared sensing film to form a vertically integrated micro-bolometer. In one embodiment, the infrared sensing film is divided into a central sensing film, a surrounding sensing film, and a plurality of connecting portions by a plurality of slots. The surrounding sensing film surrounds the central sensing film. Each of the connecting portions connects the surrounding sensing film and the central sensing film. A central distance from the bottom absorbing layer of the central sensing film to the silicon substrate is substantially equal to a surrounding distance from the bottom absorbing layer of the surrounding sensing film to the silicon substrate.

Vertically integrated micro-bolometer and manufacturing method thereof

Growing community of inventors

Taipei, Taiwan

Bo-Kai Chao