K. C. Tech Co., Ltd.

Bo Hyeok Choi

Jae Woo Lee

Ji Hye Kim

Jung Yoon Kim

Jae Hak Lee

Jang Kuk Kwon

Nak Hyun Choi

Chan Un Jeon

Ki Hwa Jung

Seong Pyo Lee

Jae Ik Lee

The present invention relates to a slurry composition for polishing an organic film, and the slurry composition for polishing an organic film according to one embodiment of the present invention comprises: abrasive particles; a polishing control agent containing an organic acid, an inorganic acid, or both; an organic film polishing enhancer containing an amide compound or an amide polymer; an oxidizing agent; and a pH control agent.

Slurry composition for polishing organic film

The present disclosure relates to a CMP slurry composition for polishing polycrystalline silicon and a polishing method using the same. A CMP slurry composition for polishing polycrystalline silicon according to an embodiment of the present disclosure includes: abrasive particles; a surface roughness reducing agent; a polishing regulator containing an organic acid; and a pH regulator.

CMP slurry composition for polishing polycrystalline silicon and polishing method using same

The present invention relates to a method for preparing a slurry composition and a slurry composition prepared thereby, and has advantages of reducing scratches and residual particles, which are considered to be one of the biggest factors contributing to the decline in yield due to macroparticles and aggregated particles, while maintaining a high polishing rate, in a semiconductor CMP process. Furthermore, the present invention can achieve excellent results in the application to various patterns required in the ultra-large scale integration semiconductor process, the wafer non-uniformity (WIWNU) exhibiting a polishing rate, polishing selectivity, and polishing uniformity, which meet the needs, and the micro-scratch minimization.

Method for preparing slurry composition and slurry composition prepared thereby

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Gyeonggi-do, South Korea

Bo Hyeok Choi