Yangtze Memory Technologies Co., Ltd.

Hubei Soundny Biotechnology Co., Ltd.

Other

Bo Huang

Lei Xue

Xiaoxin Liu

Wanbo Geng

Tingting Gao

Jiaqian Xue

Zhiliang Xia

Zhong Zhang

Wenyu Hua

Embodiments of staircase structures of a three-dimensional memory device and fabrication method thereof are disclosed. The semiconductor structure includes a first and a second film stacks, wherein the first film stack is disposed over the second film stack and has Mnumber of layers. The second film stack has Mnumber of layers. Mand Mare whole numbers. The semiconductor structure also includes an upper staircase structure and a lower staircase structure, wherein the upper staircase structure is formed in the first film stack and the lower staircase structure is formed in the second film stack. The upper and lower staircase structures are next to each other with an offset.

Staircase structure with multiple divisions for three-dimensional memory

The present disclosure provides a method of processing a semiconductor device having a stack formed over a source sacrificial layer above a substrate, a channel structure extending vertically through the stack and the source sacrificial layer, a gate line cut trench extending vertically through the stack, and a spacer layer covering uncovered top and side surfaces of the stack. The method can include exposing a lower sidewall of the channel structure by removing the source sacrificial layer, forming a protection layer on all uncovered surfaces, exposing a channel layer of the channel structure by removing a first portion of the protection layer and an insulating layer of the channel structure, forming an initial source connection layer over the exposed channel layer, exposing the substrate by removing a second portion of the protection layer, and forming a source connection layer over the initial source connection layer and the exposed substrate.

Two-step L-shaped selective epitaxial growth

A method for forming a 3D memory device is provided. The method comprises forming a sacrificial layer on a substrate, forming an alternating dielectric stack on the sacrificial layer, forming a plurality of channel holes vertically penetrating the alternating dielectric stack and the sacrificial layer, and forming a first channel layer in each channel hole. The method further comprises forming a second channel layer on the first channel layer in each channel hole, such that a merging point of the second channel layer is higher than a bottom surface of the alternating dielectric stack. The method further comprises removing the sacrificial layer to form a horizontal trench, and forming a selective epitaxial growth layer in the horizontal trench.

Three-dimensional memory devices and fabricating methods thereof

A method for forming a memory device includes providing an initial semiconductor structure, including a base substrate; a first sacrificial layer formed on the base substrate; a stack structure, disposed on the first sacrificial layer; a plurality of channels, formed through the stack structure and the first sacrificial layer; and a gate-line trench, formed through the stack structure and exposing the first sacrificial layer. The method also includes forming at least one protective layer on the sidewalls of the gate-line trench; removing the first sacrificial layer to expose a portion of each of the plurality of channels and the surfaces of the base substrate, using the at least one protective layer as an etch mask; and forming an epitaxial layer on the exposed surfaces of the base substrate and the plurality of channels.

Memory device and method for forming the same

Embodiments of staircase structures of a three-dimensional memory device and fabrication method thereof are disclosed. The semiconductor structure includes a first and a second film stacks, wherein the first film stack is disposed over the second film stack and has Mnumber of layers. The second film stack has Mnumber of layers. Mand Mare whole numbers. The semiconductor structure also includes a first and a second staircase structures, wherein the first staircase structure is formed in the first film stack and the second staircase structure is formed in the second film stack. The first and second staircase structures are next to each other with an offset.

The present invention provides an oncolytic virus formulation and preparation method thereof. The oncolytic virus formulation comprises cell vesicles derived from apoptotic tumor cells and oncolytic viruses coated in the cell vesicles as an effective component. The oncolytic virus formulation uses cell vesicles derived from tumor cells themselves to coat the oncolytic viruses, so as to evade the body's immune system attack and can be targeted to the tumor treatment site, and improve the tumor-killing effect.

Oncolytic virus formulation and preparation method thereof

The invention provides a tumor vaccine and method for producing the same. The tumor vaccine comprises cell vesicles derived from apoptotic tumor cells and an adjuvant. The invention further provides a preparation method of the tumor vaccine, comprising the steps of using the UV to irradiate the tumor cells to induce apoptosis, and collecting the cell vesicles released from the apoptotic tumor cells and then mixing the cell vesicles with the adjuvant to form the tumor vaccine. The tumor vaccine provided by the invention contains a broad and comprehensive tumor antigen spectrum, the defect that the existing tumor vaccine cannot have the killing capacity against the broad tumor cells can be overcome, and at the same time the tumor vaccine has good use safety and immune targeting property.

Tumor vaccine and method for producing the same

The present invention provides a pharmaceutical preparation for tumor chemotherapy and a method for producing the same, the pharmaceutical preparation for tumor chemotherapy comprises cell vesicles derived from apoptotic tumor cells and chemotherapeutic drugs as active ingredients wrapped within the cell vesicles. The chemotherapeutic drugs contained within the pharmaceutical preparation are chemotherapeutic drugs containing active ingredients for the treatment of the tumors from which the cell vesicles are provided. The present invention also provides a method for producing the pharmaceutical preparation for tumor chemotherapy. The technical solutions provided by the present invention can selectively release the chemotherapeutic drugs to the tumor sites and maintain lasting medicinal effect, increasing their killing effects against tumor cells and reducing the toxic side-effect of the chemotherapeutic drugs to normal cells.

Growing community of inventors

Wuhan, China

Bo Huang