Abb Research Ltd.

Abb Ab

Asea Brown Boveri Ab

Bo Bijlenga

Lennart Zdansky

Christopher Ian Harris

Peter Lundberg

Mietek Bakowski

Ulf Gustafsson

Anders Persson

Gunnar Asplund

Tomas Lars Jonsson

Staffan Norrga

Willy Hermansson

Björn Jacobson

Susan Savage

Mietek Bakowsky

Stefan Linder

Olle Ekwall

Kurt Rottner

Björn Thorvaldsson

Mojtaba Noroozian

Adolf Schoner

Ingemar Blidberg

Lennart Ramberg

Andrey Konstantinov

Karl Bergman

Bj&ouml;rn Jacobson

Henrik Spjuth

Nicklas Johansson

Esie Ramezani

Mikael Ostling

Niklas Johansson

Fanny Dahlquist

Fabian Zwick

Nils Lundberg

Patrick Erne

Fotis Stergiopoulos

The invention relates to a converter provided with a resonant circuit (), which comprises a control device () adapted, in connection with a commutation of the phase current (i) from a semiconductor element of turn-off type of a first current valve () to a rectifying member of a second current valve () to effectuate a turn-on of the auxiliary valve () of the resonant circuit with a varaible time delay (t) after the turn-off of the first current valve, the converter comprising a member () for determining said time delay in dependence on the magnitude and the direction of the phase current (i) and the magnitude and the direction of a determined unbalance so that the unbalance is corrected at least partly when the control device applies the time delay (t). The invention also relates to a method for controlling such a converter.

Converter including a control device for turning on an auxiliary valve with a time delay and a method for controlling such a converter

Equipment for exchanging power, in shunt connection, with an electric power network. A reactive impedance element and a voltage source converter provide mutual connection in series. The power network has a nominal voltage of a fundamental frequency and a given phase position. The converter is intended for generating a fundamental-tone voltage within a control range which limits the amplitude of the fundamental-tone voltage. The control range limits the amplitude of the fundamental-tone voltage to a value that is lower than the nominal voltage of the power network and comprises generation of a reactive component of the fundamental-tone voltage with a phase position that either coincides with the phase position for the voltage of the power network, or that deviates by 180&#xb0; electrically form the phase position for the voltage of the power network.

Equipment and method for exchanging power, in shunt connection, with an electric power network, and use of such equipment

The invention relates to a converter provided with a resonant circuit (), which converter comprises a device () for measuring the derivative (dI/dt) of the current through the current valves) and a detection device () co-operating with said measuring device () for detecting a short-circuit in the converter, the detection device () being adapted to detect a short-circuit current when the current derivative (dI/dt) measured by the measuring device () is equal to or exceeds a stipulated current derivative limit value (dI/dt) during a length of time exceeding a stipulated time limit value (t). The invention also relates to a method for controlling such a converter.

Converter and a method for controlling a converter

The invention relates to a VSC-converter for converting direct voltage into auxiliary voltage and vice versa, which comprises a series connection of at least two current valves () arranged between two poles (), a positive and a negative, of a direct voltage side of the converter, each current valve comprising several series connected circuits (), each of which circuits comprising a semiconductor component () of turn-off type and a rectifying component () connected in anti-parallel therewith, an alternating voltage phase line () being connected to a midpoint (), denominated phase output, of the series connection of current valves () between two of said current valves while dividing the series connection into two equal parts. Each of the series connected circuits () of the respective current valve comprises, in order to make possible a good voltage distribution between the semiconductor components () of turn-off type included in the respective current valve, a snubber capacitor () connected in parallel with the semiconductor component () of turn-off type included in the circuit. The converter () further comprises a resonance circuit () for recharging the snubber capacitors () of the current valves.

Bidirectional VSC converter with a resonant circuit

The power semiconductor module ( ) comprises a housing ( ), a covering panel ( ) and at least two submodules ( ). The submodules ( ) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections ( ) of the submodules. The submodules ( ) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel ( ) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

Power semiconductor module

A VSC-converter for converting direct voltage into alternating voltage and conversely has at least two phase legs ( ) with each at least two current valves ( ) connected in series, the valves consisting of at least a semiconductor element ( ) of turn-off type and a rectifying member ( ) connected in anti-parallel therewith. A midpoint ( ) of the phase leg between said valves is adapted to form a phase output and be connected to a phase ( ) of an alternating voltage network. The phase legs ( ) of the converter are connected in series, and opposite ends of the series connection formed by an outer end of a respective outer phase leg ( ) in the series connection are intended to be connected to a pole conductor ( ) each of a direct voltage network.

Multiphase inverter with series of connected phase legs

A device for converting alternating voltage to direct voltage and, conversely, direct voltage into alternating voltage. A series connection between the poles of a direct voltage side has at least four units each having a semiconductor element of turn-off type and a first diode connected in anti-parallel therewith. A first midpoint of the series connection is connected to an alternating voltage phase line and forms a phase output. Second midpoints of the series connection are connected to a midpoint of the direct voltage side through such units. An apparatus is adapted to control the semiconductor elements with a pulse width modulation frequency of at least one order of magnitude higher than the fundamental frequency of the alternating voltage of the phase line and the rest of the semiconductor elements with a frequency substantially lower and within or close to the frequency range of one or a couple of times of the fundamental frequency.

HVDC device for converting between alternating voltages and direct current voltages

In a VSC-converter for converting direct voltage to alternating voltage and conversely at least one phase leg (,) is arranged according to a NPC-connection. At least two of the four current valves (,) and the clamping rectifying members (,) thereof are arranged close to each other and so that commutation currents generated on commutation of the converter therein will flow in substantially opposite directions.

VSC-converter

A Schottky diode of SiC has a substrate layer, a drift layer and emitter layer regions formed in the drift layer. A metal layer makes an ohmic contact to the emitter layer regions and Schottky contact to the drift layer. A depletion of the drift layer region between two adjacent emitter layer regions is allowed in the blocking state of the diode making the two adjacent p-type emitter layer regions form a continuous depleted region therebetween in this state.

Schottky diode of SiC and a method for production thereof

A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

Semiconductor device of SiC having an insulated gate and buried grid

A method and a device for controlling a switching operation consisting of a turn on or a turn off operation in a voltage controlled power transistor is provided. At least one current source is arranged at the control electrode of the power transistor. The at least one current source controls the recharging of at least one of the capacitances which occurs between the control electrode of the power transistor and the main electrode of the power transistor to determine the time rate of change of at least one of the voltage and current.

Method and device in power transistor

In a method and apparatus used for detecting and handling a short circuit in a circuit having a plurality of power semiconductors connected in series the voltage is divided across the electrodes and each power semiconductor and the magnitude of a small proportion of the voltage is measured. The magnitude of the voltage is compared to a reference voltage at least from when the power semiconductor is turned on. The reference voltage is higher than the maximum voltage across the power semiconductor during normal operation. A short circuit is detected when the magnitude of the measured voltage exceeds the reference voltage.

Method and a device for detecting and handling short-circuit phenomena

A semiconductor component, which comprises a pn junction, where both the p-conducting and the n-conducting layers of the pn junction constitute doped silicon carbide layers and where the edge of at least one of the conducting layers of the pn junction, exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards the outermost edge.

SiC Semiconductor device comprising a pn Junction with a voltage

A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.

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Skultuna, Sweden

Bo Bijlenga