Samsung Electronics Co., Ltd.

Bo-bae Shin

Jung-Hwan Choi

Seok-Hun Hyun

Chang-Kyo Lee

Min-Su Ahn

Yong-cheol Bae

Won-young Lee

A memory device may include a data output circuit configured to multiplex a plurality of data signals read from a memory cell array, wherein the data output circuit includes a clock boosting circuit configured to receive a plurality of internal clock signals generated based on a first power voltage, and to generate a plurality of boosted clock signals by boosting the plurality of internal clock signals based on a second power voltage having a voltage level greater than that of the first power voltage, and a data output driver configured to multiplex and output the plurality of data signals synchronized with the boosted clock signals.

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Suwon-si, South Korea

Bo-bae Shin