Cypress Semiconductor Corporation

Bo B Wang

Pidugu L Narayana

Shiva P Gowni

Alpesh B Patel

An apparatus comprising a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate (i) one or more first enable signals and (ii) one or more first flag signals in response to a first clock signal and a second enable signal. The second circuit may be configured to generate a second flag signal in response to (i) the one or more first enable signals, (ii) the one or more first control signals, (iii) a second clock signal, and (iv) a pulse signal. The third circuit may be configured to generate the pulse signal in response to (i) a third clock signal and (ii) the one or more first flag signals.

Composite flag generation for DDR FIFOs

A design, layout, schematic, netlist, abstract or other equivalent circuit representations for a memory that may have redundant circuitry may be generated from a set of user inputs acquired through a graphical user interface. Based on the user inputs one or more leaf cells is/are generated. Then using the leaf cells, a design database for the layout is generated from the user inputs. The design database reflects physical hierarchies of the layout and may include redundancy circuitry within a data and/or address path, parallel to a non-redundant data and/or address path within the layout. The above-mentioned parameters described by the user inputs may include an array size, a defect rate, and/or a leaf cell design, layout or schematic. This scheme may be embodied as a set of computer-readable instructions, for example to be executed by a computer system. The user may rearrange the memory array architecture by changing a parameter selected from the group consisting of array size, defect rate, line width, line spacing, line length, gate width, transistor spacing, gate length, transistor length, resistivity, capacitance, and other physical and/or electrical device parameters.

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Austin, TX, United States of America

Bo B Wang