Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Blend Mohamad

René Escoffier

Julien Buckley

Florian Rigaud-Minet

An electronic device including semiconductor region located on a gallium nitride layer, two electrodes, located on either side of and insulated from the semiconductor region, the electrodes partially penetrating into the gallium nitride layer, and two lateral MOS transistors formed inside and on top of the semiconductor region.

Electronic device comprising transistors

A transistor comprising a gallium nitride layer having a first gate electrode partially penetrating into it, having: a first side coated with a first thickness of a first insulating material and of a second insulating material; and with a second thickness of a conductive material; and a bottom coated with a third thickness, smaller than the first thickness, of the first insulating material.

Transistor

A device including a first transistor, having a gate region partially penetrating into a gallium nitride layer, and a second transistor located inside of the gate region of the first transistor.

Electron gas transistor of normally open type, includes a first semiconductor layer laid out along a layer plane and a second semiconductor layer formed on the first semiconductor layer and laid out along the layer plane, the first and second semiconductor layers forming an electron gas layer at the interface thereof; a third semiconductor layer with P type doping formed on the second semiconductor layer and laid out along the layer plane, a first zone with N type doping of which a part is arranged within the thickness of the third semiconductor layer, the first zone-delimiting a source zone; a second zone with N or metal type doping having at least one part arranged in the second semiconductor layer; a source electrode formed on the source zone; a drain electrode formed on the first semiconductor layer; and a gate located between the source electrode and the second zone.

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Grenoble, France

Blend Mohamad