Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Blandine Alloing

Guy Feuillet

Jesus Zuniga Perez

Hubert Bono

Julien Buckley

Matthew Charles

Rene Escoffier

Benoit Mathieu

René Escoffier

Virginie Brandli

Roy Dagher

A method for obtaining mesas that are made at least in part of a nitride (N), the method includes providing a stack comprising a substrate and at least the following layers disposed in succession from the substrate a first layer, referred to as the flow layer, and a second, crystalline layer, referred to as the crystalline layer; forming pads by etching the crystalline layer and at least one portion of the flow layer such that: —each pad includes at least: —a first section, referred to as the flow section, formed by at least one portion of the flow layer, and a second, crystalline section, referred to as the crystalline section, framed by the crystalline layer and overlying the flow section, the pads are distributed over the substrate so as to form a plurality of sets of pads; and epitaxially growing a crystallite on at least some of said pads and continuing the epitaxial growth of the crystallites until the crystallites carried by the adjacent pads of the same set coalesce.

Method for producing nitride mesas each intended to form an electronic or optoelectronic device

A process for obtaining a nitride (N) layer preferably obtained from at least one of gallium (Ga), indium (In) and aluminium (Al), may include: on a stack including a substrate and at least the following layers successively disposed from the substrate: a creep layer having a glass transition temperature, T, and a crystalline layer, forming pads by etching the stack so that each pad includes at least a creep segment formed by at least a portion of the creep layer, and a crystalline segment formed by the crystalline layer; and growing by epitaxy a crystallite on each of the pads and continuing the epitaxial growth of the crystallites so as to form the nitride layer. The epitaxial growth may be carried out at a temperature T, such that T≥k1×T, with k1 being 0.8.

Process for obtaining a nitride layer

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Valbonne, France

Blandine Alloing