University of Colorado

University Technology Corporation

University Technology Center Corp

Blake J Eliasson

Garret R Moddel

Manoja D Weiss

Michael John Estes

Garrett Moddel

A detector includes a voltage source for providing a bias voltage and first and second non-insulating layers, which are spaced apart such that the bias voltage can be applied therebetween and form an antenna for receiving electromagnetic radiation and directing it to a specific location within the detector. The detector also includes an arrangement serving as a transport of electrons, including tunneling, between and to the first and second non-insulating layers when electromagnetic radiation is received at the antenna. The arrangement includes a first insulating layer and a second layer configured such that using only the first insulating in the arrangement would result in a given value of nonlinearity in the transport of electrons while the inclusion of the second layer increases the nonlinearity above the given value. A portion of the electromagnetic radiation incident on the antenna is converted to an electrical signal at an output.

High speed electron tunneling devices

A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

Thin-film transistors based on tunneling structures and applications

An assembly includes a device for receiving at least one input to produce an output. An antenna supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna supports a selected one of the input and the output as a high frequency current. The antenna includes a peripheral configuration which confines high frequency current to at least one dominant path to oscillate therein. The other one of the input and the output is a lower frequency signal present at least generally throughout the antenna. At least one port is positioned away from the dominant path to isolate the lower frequency signal from high frequency current in the dominant path. The antenna is configured to support the lower frequency signal having a frequency in a low frequency range including zero to several terahertz.

Terahertz device integrated antenna for use in resonant and non-resonant modes and method

A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further includes the steps of providing a second layer, and forming a second non-insulating layer and providing an antenna structure connected with the first and second non-insulating layers. The second layer of material is configured to cooperate with the first amorphous layer such that the first amorphous layer and the second layer of material together serve as a transport of electrons between and to the first and second non-insulating layers, and the transport of electrons includes, at least in part, transport by means of tunneling.

Method for fabricating a metal-oxide electron tunneling device for solar energy conversion

A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there across, and a second arrangement between the first and second non-insulating layers. The second arrangement includes a first amorphous layer configured such that a transport of electrons between the first and second non-insulating layers includes tunneling. The first arrangement further includes an antenna structure for absorbing part of an input radiation, while a remainder of the input radiation is reflected. The second arrangement cooperates with the first arrangement such that the antenna exhibits a first absorptivity, when a first modulation voltage is applied to the first arrangement, and exhibits a distinct, second absorptivity, when a second modulation voltage is applied, thereby causing the antenna to reflect a different amount of input radiation to an output as modulated radiation.

High speed electron tunneling device and applications

An assembly includes a device for receiving at least one input to produce an output. An antenna arrangement supports the device to transfer the input to the device and further to transfer the output from the device such that the antenna arrangement supports a selected one of the input and the output as a high frequency current. The antenna includes a peripheral configuration which confines high frequency current to at least one dominant path to oscillate in the dominant path and the other one of the input and the output is a lower frequency signal present at least generally throughout the antenna arrangement. At least one port is positioned sufficiently away from the dominant path to isolate the lower frequency signal from surface current in the dominant path. The assembly is usable in modulation, emitting, mixing and detection modes and may include a resonant or non-resonant configuration.

Device integrated antenna for use in resonant and non-resonant modes and method

A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltage can be applied thereacross. The first non-insulating layer is formed of a metal, and the first and second non-insulating layers are configured to form an antenna structure for receiving electromagnetic radiation over the desired range of frequencies. The detector further includes an arrangement disposed between the first and second non-insulating layers and configured to serve as a transport of electrons between the first and second non-insulating layers as a result of the electromagnetic radiation being received at the antenna structure. The arrangement includes at least a first layer of an amorphous material such that the transport of electrons includes, at least in part, transport by means of resonant tunneling, and such that at least a portion of the electromagnetic radiation incident on the antenna is converted at the output to an electrical signal having an intensity which depends on the given responsivity.

The electron tunneling device includes first and second non-insulating layers spaced apart such that a given voltage can be provided therebetween. The device also includes an arrangement disposed between the non-insulating layers and configured to serve as a transport of electrons between the non-insulating layers. This arrangement includes a first layer of an amorphous material such that using only the first layer of amorphous material in the arrangement would result in a given value of a parameter in the transport of electrons, with respect to the given voltage. The arrangement further includes a second layer of material, which is configured to cooperate with the first layer of amorphous material such that the transport of electrons includes, at least in part, transport by tunneling, and such that the parameter, with respect to the given voltage, is increased above the given value of the parameter.

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Boulder, CO, United States of America

Blake J Eliasson