Bae Systems Information and Electronic Systems Integration Inc.

Schilmass Co. L.l.c.

Blair E Coburn

Kanin Chu

Robert Actis

Robert J Lender, Jr

Michael Richard Ehlert

Thomas O Perkins, Iii

Candice L Brittain

Ronald H Schmidt

Peter M Wallace

Steve M Rajkowski

A high power amplifier architecture is disclosure. One example configuration includes a first plurality of distributed amplification stages operatively coupled in a first string. A conductive trace associated with the first string provides a stepped structure, such that the associated inductance successively decreases from input to output of the first string. A second plurality of distributed amplification stages is operatively coupled in a second string, and a conductive trace associated therewith provides a stepped structure, such that the associated inductance successively decreases from input to output of the second string. In one example case, each of the first and second strings comprises gallium nitride transistor amplification stages formed on silicon carbide. The module may further include a heat spreader material that thermally and electrically couples to the amplification stages. The conductive trace associated with one string can be shared with another string.

High power amplifier

A system is provided for the integration of microwave components in a low temperature co-fired ceramic, the system includes a low temperature co-fired ceramic body having a top surface, into which is disposed a plurality of cavities; a plurality of microwave devices, each device being disposed within a cavity such that the cavities provide radio isolation to the devices; and a coaxial connection disposed within the body configured to connect the devices to external components the coaxial components comprising vias disposed within the co-fired ceramic body.

Low temperature co-fired ceramic (LTCC) transmit/receive (T/R) assembly utilizing ball grid array (BGA) technology

Growing community of inventors

Milford, NH, United States of America

Blair E Coburn