Norstel Ab

Siced Electronics Development Gmbh & Co Kg

Telefonaktiebolaget Lm Ericsson (Publ)

Björn Magnusson

Alexandre Ellison

Heinz Mitlehner

Robert Petersen

Dietrich Stephani

Peter Friedrichs

Asko Vehanen

Christer Hallin

Peter Loborg

Ulf Hubinette

Peder Bergman

Erik Janzén

Meta Landstedt

Nguyen Tien Son

Esko Leinonen

Camilla Nyberg

A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 10cmand a carrier lifetime of at least 50 ns.

Lightly doped silicon carbide wafer and use thereof in high power devices

A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 &#x3bc;m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Homoepitaxial growth of SiC on low off-axis SiC wafers

A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5&#xd7;10cm, and a concentration of transition metals impurities less than 5&#xd7;10cm. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700&#xb0; C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.

A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 &#x3bc;m.

A uniform silicon carbide single crystal with either an n-type or a p-type conductivity. The crystal has a net carrier concentration less than 10cmand a carrier lifetime of at least 50 ns at room temperature.

The purpose of the invention is to provide a high resistivity silicon carbide substrate with electrical properties and structural quality suitable for subsequent device manufacturing, such as for example high frequency devices, so that the devices can exhibit stable and linear characteristics and to provide a high resistivity silicon carbide substrate having a low density of structural defects and a substantially controlled uniform radial distribution of its resistivity.

Growing community of inventors

Linköping, Sweden

Björn Magnusson