Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Björn Globisch

Thorsten Göbel

Roman J Dietz

Mykhaylo Semtsiv

William Ted Masselink

Roman Dietz

Robert Kohlhaas

Simon Nellen

Roman J B Dietz

W Ted Masselink

Roman JB Dietz

Thorsten GÖBEL

Mykhaylo Petrovych Semtsiv

An arrangement for an antenna for generating or receiving terahertz radiation can comprise a photoactive layer which can be activated by optical radiation in the range 1200 nm to 1700 nm, a substrate that is transparent to optical radiation and to which the photoactive layer is attached, and a first adhesion-promoting layer. The first adhesion-promoting layer is arranged between the photoactive layer and the substrate and connects them to each other, wherein first adhesion-promoting layer has a layer thickness of no more than 5 μm. The arrangement can also include and a carrier transparent to the optical radiation. The substrate is attached to the carrier and is arranged between the photoactive layer and the carrier. The substrate and the carrier can be made of the same material.

Arrangement for an antenna for generating or receiving terahertz radiation, antenna, terahertz system, and method for producing an arrangement for an antenna

Receiving antenna () for terahertz radiation (), comprising an antenna conductor () and a first photoconductor () connected to the antenna conductor () and activatable by light (), the first photoconductor () allowing, in an activated state, an antenna current () flowing through the antenna conductor () and the first photoconductor (), characterized in that the receiving antenna () comprises at least one second photoconductor () connected to the antenna conductor () and activatable by light (), the second photoconductor connected in parallel with the first photoconductor () and, in an activated state, allowing an antenna current () flowing through the antenna conductor () and the second photoconductor (), wherein at least one respective high-pass filter () is connected between each of the photoconductors () and the antenna conductor (). The invention further relates to a receiver for terahertz radiation (), a terahertz system, and a method for generating and detecting terahertz radiation () using such a terahertz system.

Multichannel photoconductive terahertz receiving antenna, re-ceiver, terahertz system and terahertz method

A terahertz transceiver, comprising at least a first and a second antenna, wherein the first and/or the second antenna is a dipole antenna comprising a dipole section, wherein the dipole section has a gap through which light can be radiated onto the photoconductive material, and wherein a first ending of the dipole section is connected to a first feedline and a second ending of the dipole section is connected to a second feedline, the feedlines (extending with an angle to the dipole section. The first and/or the second antenna has an asymmetric design, wherein a first section of at least one of the feedlines extending on one side of the dipole section is longer than a second section of the at least one feedline extending on the other side of the dipole section and/or at least one of the feedlines extends on one side of the dipole section, only.

Terahertz transceivers

A photoconductor for emitting and/or receiving electromagnetic waves is provided. The photoconductor comprises a material region comprising a first and a second section, wherein the second section provides a higher density of charge carrier trapping centers and/or recombination centers than the first section, and a confinement generating a sub-band structure of the charge carrier energy states in the material region. The first and the second section are arranged and configured in such a manner that a maximum of the carrier probability density of the sub-band ground state is located in one of these sections and a maximum of the carrier probability density of an excited sub-band state is located in the respective other section.

Photoconductor for emitting and/or receiving electromagnetic waves

A terahertz antenna includes at least one photoconductive layer which generates charge carriers upon irradiation of light and two electroconductive antenna elements via which an electric field can be applied to at least one section of the photoconductive layer. The photoconductive layer being doped with a dopant in a concentration of at least 1&#xd7;1018 cm&#x2212;3, the dopant being a transition metal. The photoconductive layer is produced by molecular beam epitaxy at a growth temperature of at least 200&#xb0; C. and not more than 500&#xb0; C., the dopant being arranged in the photoconductive layer such that it produces a plurality of point defects.

Growing community of inventors

Berlin, Germany

Björn Globisch