Imec Vzw

Universiteit Gent

Panasonic Corporation

Bjorn Vandecasteele

Paolo Fiorini

Maki Hiraoka

Maria Op De Beeck

An example embodiment may include a method for placing on a carrier substrate a semiconductor device. The method may include providing a semiconductor substrate comprising a rectangular shaped assist chip, which may include at least one semiconductor device surrounded by a metal-free border. The method may also include dicing the semiconductor substrate to singulate the rectangular shaped assist chip. The method may further include providing a carrier substrate having adhesive thereon. The method may additionally include transferring to and placing on the carrier substrate the rectangular shaped assist chip, thereby contacting the adhesive with the rectangular shaped assist chip at least at a location of the semiconductor device. The method may finally include singulating the semiconductor device, while remaining attached to the carrier substrate by the adhesive, by removing a part of rectangular shaped assist chip other than the semiconductor device.

Method for transferring and placing a semiconductor device on a substrate

In order to solve the problem of the generation of the interspace between layers, the present invention provides an actuator including: a conductive polymer layer; an ambient temperature molten salt layer; and an opposite electrode layer; wherein the ambient temperature molten salt layer is interposed between the conductive polymer layer and the opposite electrode layer, the ambient temperature molten salt layer includes an adhesive layer in the inside thereof; one surface of the adhesive layer adheres to the conductive polymer layer; and the other surface of the adhesive layer adheres to the opposite electrode layer.

Growing community of inventors

Harelbeke, Belgium

Bjorn Vandecasteele