Infineon Technologies Ag

Bjorn-Oliver Eversmann

Roland Thewes

Christian Paulus

Martin Jenkner

Ralf Peter Brederlow

Reinhard Gabl

Wolfram Wersing

Matthias Schreiter

Guido Stromberg

Peter Fromherz

Ivo Koren

Tamara Birkenmaier

Apparatus for measuring neural network activity with a textured semiconductor substrate. Sensor elements have a respective detection electrode on the substrate surface for detecting neural network signals, and the detected neural signals are a basis for outputting electrical sensor output signals via respective sensor element outputs. Each amplifier element has an input and an output. Each of the sensor elements has associated therewith one of the amplifier elements whose input is connected to the sensor output of the respective sensor element. The amplified sensor output signal is output the amplifier output as an amplifier output signal. An activity evaluator has an input, which is connected to at least one of the amplifier outputs, and an output. The activity evaluation device produces an activity signal, which is a measure of activity of the neural network, based on the amplifier output signal, and outputs the amplifier output signal via the evaluation output.

Event detection&#x2014;apparatus and method for measuring the activity of neural networks

Sensor arrangement having row and column lines arranged in first and second directions, respectively, sensor arrays arranged in crossover regions of the row and column lines, a detector, and a decoding device. The sensor arrays have a coupling device for electrically coupling respective row and column lines, and a sensor element to influence electric current flow through the coupling device. The detector is electrically coupled to a respective end section of at least a portion of the row and column lines, and detects a respective accumulative current flow from the individual electrical current flows provided by the sensor arrays of the respective lines. The decoding device is coupled to the row and column lines, and evaluates at least a portion of the accumulative electric current flows fed to the decoding device via the row and column lines to determine at which of the sensor elements a sensor signal is present.

Sensor arrangement

Biochip for capacitive stimulation and/or detection of biological tissues. The biochip has a carrier structure, at least one stimulation and/or sensor device, which is arranged in or at the carrier structure, and at least one dielectric layer, one layer area of which is arranged at the stimulation and/or sensor device and the opposite layer area of which forms a stimulation and/or sensor area for capacitive simulation and/or detection of biological tissues, wherein the dielectric layer comprises TiO.

CMOS-process compatible high-DC surface coating for capacitive detection and stimulation of biological tissues

A measuring cell for recording an electrical potential of an analyte situated on the measuring cell. The measuring cell has a sensor, a layer arranged above the sensor and electrically insulating the analyte from the sensor, and an amplifier circuit connected to the sensor on a substrate and having an input stage containing a field-effect transistor or a bipolar transistor, the sensor being at least indirectly connected to a control terminal of the field-effect transistor or of the bipolar transistor. An operating point of the amplifier circuit is set by means of a voltage or a current applied at the control terminal of the field-effect transistor or of the bipolar transistor of the input stage of the amplifier circuit.

Measuring cell and measuring field comprising measuring cells of this type, use of a measuring and use of a measuring field

Biosensor circuit arrangement including a substrate, a sensor element formed in or on a surface region of the substrate with a physical parameter, which is coupled to a substance to be examined, the type of coupling having a resistive component, the sensor element having an electrically conductive sensor electrode that is coupled to the substance to be examined, the sensor element having a measuring transistor the gate terminal of which is coupled to the electrically conductive sensor electrode, and the physical parameter being the threshold voltage of the measuring transistor, and a calibration device formed in or on the substrate, the calibration device being set up such that it is used to at least partly compensate for an alteration of the value of the physical parameter of the sensor element.

Growing community of inventors

Munich, Germany

Bjorn-Oliver Eversmann