Infineon Technologies Ag

Bjorn Flach

Wolfgang Ruf

Martin Schnell

Monica De Castro Martins

A backwards-compatible memory module is disclosed. According to one aspect, a memory module comprises addressable memory cells organized in organization units having a predetermined number of memory cells, a read/write control device clocked by a first clock signal, a plurality of prefetch registers for initially storing data read from the memory cells wherein the register size corresponds to the predetermined number. In a first operating mode, a switching device clocked by a second clock signal successively couples the prefetch registers to data input/output terminals. The number of data input/output terminals corresponds to the predetermined number. In a second operating mode, the switching device is controlled by at least one address signal and couples at least one of the prefetch registers to the data input/output terminals.

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Munich, Germany

Bjorn Flach