Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Bjoern Muermann

Franz Eberhard

Fabian Kopp

Attila Molnar

Korbinian Perzlmaier

Karl Engl

Christian Eichinger

Julian Ikonomov

Martin Lemberger

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area and a second contact finger structure connected to the second contact area, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at a plurality of openings, in which the connection layer and the current distribution layer adjoin one another, and wherein edge regions of the insulation layer includes more openings than a central region of the insulation layer.

Radiation-emitting semiconductor chip

In an embodiment a radiation-emitting semiconductor chip includes a semiconductor body having an active region configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the radiation-emitting semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the radiation-emitting semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the radiation-emitting semiconductor chip, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer.

A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.

The invention relates to an optoelectronic component. The component includes a semiconductor layer sequence having an active layer that is designed to emit electromagnetic radiation during operation of the component, at least one current-spreading layer on a radiation outlet surface of the semiconductor layer sequence, wherein the current-spreading layer is connected to a contact structure in an electrically conductive manner by means of an adhesion layer. The adhesion layer comprises a titanium oxide, wherein in the titanium oxide the oxygen has the oxidation state W, with W=&#x2212;2, and the titanium has the oxidation state W, with 0 &#x3c;W&#x3c;+4.

Optoelectronic component with electrically-conductive adhesive layer including titanium oxide and method for producing the optoelectronic component

An electrical contact structure () for a semiconductor component () is specified, comprising a transparent electrically conductive contact layer (), on which a first metallic contact layer () is applied, a second metallic contact layer (), which completely covers the first metallic contact layer (), and a separating layer (), which is arranged between the transparent electrically conductive contact layer () and the second metallic contact layer () and which separates the second metallic contact layer () from the transparent electrically conductive contact layer (). Furthermore, a semiconductor component () comprising a contact structure () is specified.

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Wuppertal, Germany

Bjoern Muermann