Novaled Gmbh

Sony Corporation

Novaled Ag

Sony Deutschland Gmbh

Forschungszentrum Juelich Gmbh

Bjoern Luessem

Karl Leo

Hans Kleemann

Alexander Zakhidov

Jurina Wessels

Axel Fischer

Hans Kleeman

Alrun Guenther

Akio Yasuda

Gabriele Nelles

William E Ford

Silvia Rosselli

Kentaro Harada

Dirk Mayer

Andreas Offenhaeusser

Rene Wirtz

Heinz-Georg Nothofer

Daniel Schwaab

Deqing Gao

Florian Von Wrochem

Sandra Gilles

Philipp Sebastian

Frank Lindner

Daniel Kasemann

The application relates to a vertical organic transistor having a layer structure on a substrate. The layer structure includes an electrode, a counter-electrode, and an electronically active layer arrangement which is disposed between the electrode and the counter-electrode. The application further relates to a method for fabricating a vertical organic transistor and a circuit arrangement.

Vertical organic transistor, circuit configuration and arrangement with vertical organic transistors and method of manufacturing

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

Method for producing an organic field effect transistor and an organic field effect transistor

The disclosure relates to organic field effect transistors, and methods for producing organic field effect transistors. The organic field effect transistors may include a first electrode, and a second electrode, the electrodes providing a source electrode and a drain electrode, an intrinsic organic semiconducting layer in electrical contact with the first and second electrode, a gate electrode, a gate insulator provided between the gate electrode and the intrinsic organic semiconducting layer, and a doped organic semiconducting layer including an organic matrix material and an organic dopant.

Organic field effect transistor and method for producing the same

The disclosure provides a method of manufacturing an organic electronic device, including providing a layered device structure, the layered device structure including a plurality of electrodes and an electronically active region, said providing of the layered device structure including steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.

Method for manufacturing an organic electronic device and organic electronic device

The disclosure relates to a method for producing an organic field effect transistor, including providing a gate electrode and a gate insulator, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode. Furthermore, an organic field effect transistor is provided.

The invention relates to a vertical organic transistor on a substrate having an electrode, a counter electrode and a layer arrangement which is arranged between the electrode and the counter electrode, wherein the layer arrangement is formed with the following layers: a central electrode, an organic layer made up of organic semiconductor material which is arranged between the central electrode and the electrode, a further organic layer made up of organic semiconductor material, which is arranged between the central electrode and the counter electrode, and a doping layer which is arranged between the central electrode and the electrode. Furthermore, the invention relates to a method for producing a vertical organic transistor.

Vertical organic transistor and production method

Organic electronic devices and methods for making organic electronic devices are provided. The organic electronic devices may include a gate electrode, a gate insulator, an organic semiconducting layer, a contact improving layer, a source electrode, and a drain electrode. The source electrode and the drain electrode may be arranged on the contact improving layer, and the contact improving layer may include an organic dopant material which is soluble in Hydrofluorether.

This disclosure relates to an organic zener diode having one electrode and one counter electrode, and an organic layer arrangement formed between the electrode and the counter electrode, wherein the organic layer arrangement includes the following organic layers: an electrically n-doped charge carrier injection layer on the electrode side, made from a mixture of an organic matrix material and an n-dopant, an electrically p-doped charge carrier injection layer on the counter electrode side, made from a mixture of another organic matrix material and a p-dopant, and an electrically undoped organic intermediate layer that is arranged between the electrically n-doped charge carrier injection layer on the electrode side and the electrically p-doped charge carrier injection layer on the counter electrode side. An electronic circuit arrangement with an organic zener diode and method for operating an organic zener diode are also provided.

Organic zener diode, electronic circuit, and method for operating an organic zener diode

The invention relates to an organic memory with an electrode and a counter-electrode, comprising at least one oxide layer, an electrically undoped organic layer and an electrically doped organic layer between the electrode and the counter-electrode, wherein the oxide layer is adjacent to the electrode and the undoped organic layer.

Organic memory element

The present invention relates to asymmetric molecular bilayers for the use in the junctions of electronic devices, such as crossbar junctions, comprising the general structure E-M( )M-E, wherein Eand Edenote a top and a bottom electrode, Mand Mrepresent functional molecules both forming a self-assembled monolayer (SAM) on said top or bottom electrode, and the symbol ( ) denotes a non-covalent interaction between the two monolayers, resulting in a molecular bilayer, sandwiched between the two electrodes. The electrodes are solid state electrodes and stationary with respect to each other. The present invention also relates to a method of producing such assemblies.

Junctions comprising molecular bilayers for the use in electronic devices

The invention relates to an electronic device, comprising a field effect transistor and a resistive switch electrically coupled with each other, wherein the resistive switch is configured to be switched between a state of low resistance and a state of high resistance.

Electronic device for a reconfigurable logic circuit

A method and associated substrate is provided for applying a layer or pattern of metal on a substrate. The method includes providing a target substrate, immobilizing a layer of polymeric material on the target substrate, and applying and immobilizing a layer or pattern of metal on the layer of polymeric material on the target substrate using a stamp onto which the layer or pattern of metal has previously been applied, by bringing the stamp into conformal contact with the target substrate.

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Dresden, Germany

Bjoern Luessem