International Business Machines Corporation

Bishan He

Rajiv V Joshi

Dureseti Chidambarrao

Baozhen Li

Donald W Plass

Gregory J Fredeman

Atsushi Ogino

Noam Jungmann

Kenneth J Reyer

Elazar Kachir

Dinesh Kannambadi

Klimentiy Shimanovich

An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a static random access memory (SRAM) array including a conductive line and an assist circuit having a boost capacitor coupled to boost a voltage on the conductive line. The boost capacitor includes first and second plates. The integrated circuit further includes a sense circuit having an input coupled to one of the first and second plates of the boost capacitor and an output and a sample circuit coupled to the output of the sense circuit. The sample circuit is configured to detect a short circuit in the boost capacitor based on a state change at the output of the sense circuit.

Short circuit detection in a read/write assist capacitor of a memory

Techniques for voltage bitline high (VBLH) regulation for a computer memory are described herein. An aspect includes generating, by a resistor ladder and a diode compensation footer, a VBLH reference signal based on a high voltage (VPP) in a computer memory module. Another aspect includes regulating a VBLH signal based on the VBLH reference signal. Another aspect includes regulating a wordline driver voltage of the computer memory module based on the VBLH signal.

Voltage bitline high (VBLH) regulation for computer memory

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Poughkeepsie, NY, United States of America

Bishan He