Applied Materials, Inc.

Bipin Thakur

Dmitry Lubomirsky

Prerna Sonthalia Goradia

Laksheswar Kalita

Ankur Kadam

Yogita Pareek

Geetika Bajaj

Yixing Lin

Kevin A Papke

Vikas Gujar

Pravin K Narwankar

Dieter Haas

Omkaram Nalamasu

Joe Griffith Cruz

Victor Pushparaj

Sung Je Kim

Stefan Keller

Kaushik Vaidya

Mahesh Arcot

Ravindra Patil

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Method for forming yttrium oxide on semiconductor processing equipment

The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment

A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10&#xb0; C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NHOH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlOfilm having a thickness of 4 to 8 nm and a surface roughness less than 0.05 &#x3bc;m greater than a surface roughness of the component without the AlOfilm.

Generation of compact alumina passivation layers on aluminum plasma equipment components

Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Apparatus and methods for forming energy storage and photovoltaic devices in a linear system

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Mumbai, India

Bipin Thakur