Qualcomm Incorporated

Bipin Duggal

Rahul Gulati

Ritu Chaba

Sina Dena

Naishad Parikh

Paramjeet Singh

A Read Only Memory (ROM) cell array includes: a first transistor coupled to a first word line; a second transistor coupled to a second word line; and a third transistor disposed between the first transistor and the second transistor, the third transistor having a first gate terminal permanently coupled to a power rail.

Systems and methods for providing a read only memory cell array

An apparatus including a memory subsystem. The memory subsystem includes a data input and a clock input. The apparatus also includes a variable delay circuit coupled to one of the data input or the clock input. Additionally, the apparatus includes a controller coupled to the variable delay circuit. The controller is configured to dynamically control the delay of the variable delay circuit. The controller may adjust the delay of the variable delay circuit based on at least one of timing data for a memory subsystem design of the memory subsystem, timing data for the memory subsystem, a voltage applied to the memory subsystem, or a temperature of the memory subsystem.

Memory hold margin characterization and correction circuit

In certain aspects of the disclosure, a frequency monitor includes a counter configured to receive a monitored clock signal, to count a number of periods of the monitored clock signal over a predetermined time duration, and to output a count value corresponding to the number of periods of the monitored clock signal. The frequency monitor also includes a comparator configured to receive the count value from the counter, to receive an expected count value, to compare the count value from the counter with the expected count value, and to output a pass status signal or a fail status signal based on the comparison.

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Irvine, CA, United States of America

Bipin Duggal