Micron Technology Incorporated

Biow Hiem Ong

David A Kewley

Xiaosong Zhang

Yongjun Jeff Hu

Robert J Hanson

Daniel Billingsley

Suresh Ramarajan

Christian George Emor

Keen Wah Chow

Chieh Hsien Quek

Michael J Irwin

Chii Wean Calvin Chen

Wing Yu Lo

Md Zahid Hossain

Lifang Xu

Justin B Dorhout

David A Daycock

Matthew J King

Adam L Olson

Matthew Park

David Daycock

Shruthi Kumara Vadivel

Jason Reece

Joel D Peterson

Michael J Gossman

Bo Zhao

Martin Jared Barclay

Tien Minh Quan Tran

Kah Sing Chooi

Zhen Feng Yow

A microelectronic device includes a stack structure including a vertically alternating sequence of conductive structures and insulating structures arranged in tiers, a dielectric-filled opening vertically extending into the stack structure and defined between two internal sidewalls of the stack structure, a stadium structure within the stack structure and comprising steps defined by horizontal ends of at least some of the tiers, a first ledge extending upward from a first uppermost step of the steps of the stadium structure and interfacing with a first internal sidewall of the two internal sidewalls of the stack structure, and a second ledge extending upward from a second, opposite uppermost step of the steps of the stadium structure and interfacing with a second, opposite internal sidewall of the two internal sidewalls.

Microelectronic devices including stadium structures

An apparatus comprises a structure including an upper insulating material overlying a lower insulating material, a conductive element underlying the lower insulating material, and a conductive material comprising a metal line and a contact. The conductive material extends from an upper surface of the upper insulating material to an upper surface of the conductive element. The structure also comprises a liner material adjacent the metal line. A width of an uppermost surface of the conductive material of the metal line external to the contact is relatively less than a width of an uppermost surface of the conductive material of the contact. Related methods, memory devices, and electronic systems are disclosed.

Apparatus and memory device including conductive lines and contacts, and methods of forming an apparatus including conductive lines and contacts

Methods for forming microelectronic devices include forming a staircase structure in a stack structure having a vertically alternating sequence of insulative and conductive materials arranged in tiers. Steps are at lateral ends of the tiers. Contact openings of different aspect ratios are formed in fill material adjacent the staircase structure, with some openings terminating in the fill material and others exposing portions of the conductive material of upper tiers of the stack structure. Additional conductive material is selectively formed on the exposed portions of the conductive material. The contact openings initially terminating in the fill material are extended to expose portions of the conductive material of lower elevations. Contacts are formed, with some extending to the additional conductive material and others extending to conductive material of the tiers of the lower elevations. Microelectronic devices and systems incorporating such staircase structures and contacts are also disclosed.

Methods for fabricating microelectronic devices with contacts to conductive staircase steps, and related devices and systems

Apparatus comprising structures including contact vias and conductive lines, related methods, and memory devices

Growing community of inventors

Singapore, Singapore

Biow Hiem Ong