Applied Materials Israel Limited

Binyamin Kirshner

David Goldovsky

Haim Eder

Yechiel Kapoano

Amir Shoham

Yehiel Kapoano

Nitzan Chamiel

A system for optical imaging of defects on unpatterned wafers that includes an illumination module, relay optics, a segmented polarizer, and a detector. The illumination module is configured to produce a polarized light beam incident on a selectable area of an unpatterned wafer. The relay optics is configured to collect and guide, radiation scattered off the area, onto the polarizer. The detector is configured to sense scattered radiation passed through the polarizer. The polarizer includes at least four polarizer segments, such that (i) boundary lines, separating the polarizer segments, are curved outwards relative to a plane, perpendicular to the segmented polarizer, unless the boundary line is on the perpendicular plane, and (ii) when the area comprises a typical defect, a signal-to-noise ratio of scattered radiation, passed through the polarizer segments, is increased as compared to when utilizing a linear polarizer.

Optimizing signal-to-noise ratio in optical imaging of defects on unpatterned wafers

Disclosed herein is a method for increasing signal-to-noise (SNR) in optical imaging of defects on unpatterned wafers. The method includes: (i) irradiating a region of an unpatterned wafer with a substantially polarized, incident light beam, and (ii) employing relay optics to collect and guide, radiation scattered off the region, onto a segmented polarizer comprising at least four polarizer segments characterized by respective dimensions and polarization directions. The respective dimensions and polarization direction of each of the at least four polarizer segments are such that an overall power of background noise radiation, generated in the scattering of the incident light beam from the region and passed through all of the at least four polarizer segments, is decreased as compared to utilizing a linear polarizer.

Increasing signal-to-noise ratio in optical imaging of defects on unpatterned wafers

Systems and methods for optical inspection of a sample are provided. Radiation scattered from the sample includes a first portion having a first polarization state and a second portion having a second polarization state that is a mirror image of the first polarization state. The first polarization state of the first portion of the scattered radiation is transposed using a polarizing mirroring device so that the scattered radiation output from the polarizing mirroring device has substantially the second polarization state.

Optical inspection

A system and method for multiple mode inspection of a sample. The system includes a radiation source, an objective lens, a bright field detection module, a dark field detection module and optics. The optics, when the system operates at a first mode, is configured to direct the input beam through a first opening, without substantially blocking any part of the input beam, towards a first region of the objective lens. The optics, when the system operates at a second mode, is configured to direct the input beam through a second opening, without substantially blocking any part of the input beam, towards a second region of the objective lens. The first region of the objective lens differs from the second region of the objective lens.

System and method for multiple mode inspection of a sample

A beam shaping system including: a first and second optical modules that are accommodated in a spaced-apart relationship in an optical path of light through the system to sequentially apply beam shaping to light incident thereon. The beam shaping system includes first and second alignment modules respectively carrying the first and second optical modules and operable for laterally positioning the optical modules with respect to the optical path. A calibration module of the beam shaping system is connectable to the first and second alignment modules and is operable to sequentially calibrate and align the respective lateral positions of the first and second optical modules with respect to the optical path. The system thereby enables shaping of an incoming light beam of given predetermined wave-front and lateral intensity distribution to form an output light beam having desired wave-front and desired lateral intensity distribution.

Growing community of inventors

Elkana, Israel

Binyamin Kirshner