Chinese Academy of Sciences

Binjie Fei

Jian Chen

Wang Guo

Zhonghua Deng

Xuanyi Yuan

Qiufeng Huang

Yongge Cao

Junting Li

Zhuguang Liu

Fei Tang

A GaN based LED epitaxial structure and a method for manufacturing the same. The GaN based LED epitaxial structure may include: a substrate; and a GaN based LED epitaxial structure grown on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material. The photoelectric efficiency of the LED epitaxial structure is enhanced and the amount of heat generated from a device is reduced by utilizing a rare earth element doped ReAlOsubstrate; since the LED epitaxial structure takes a fluorescence material as a substrate, a direct white light emission may be implemented by such an LED chip manufactured by the epitaxial structure, so as to simplify the manufacturing procedure of the white light LED light source and to reduce production cost. The defect density of the epitaxial structure is reduced by firstly epitaxial growing, patterning the substrate and then laterally growing a GaN based epitaxial structure.

GaN based LED epitaxial structure and method for manufacturing the same

Growing community of inventors

Fujian, China

Binjie Fei