Sk Hynix Nand Product Solutions Corp.

Intel Ndtm US LLC

Binh Ngo

Chang Wan Ha

Aliasgar S Madraswala

Sagar Upadhyay

Pranav Chava

Netra Mahuli

Ahsanur Rahman

Soo-yong Park

Radhika Chinnammagari

Bharat Pathak

Naveen Prabhu Vittal Prabhu

Systems, apparatuses and methods may provide for technology that sends a first command to a NAND die, sends first address information to the NAND die, and sends a second command to the NAND die, wherein the first command and the second command define a first command sequence and wherein the first address information signal a beginning of a first asynchronous read request from a first plurality of planes. In one example, the technology also sends a second command sequence and second address information to the NAND die wherein the second command sequence signals an end of the first asynchronous read request.

Independent multi-page read operation enhancement technology

Systems, apparatuses and methods may provide for technology that includes a charge pump and applies a program voltage from the charge pump to selected wordlines in the NAND memory. The technology may also conduct a discharge of the program voltage from the charge pump and maintain a connection between the selected wordlines and a pass voltage of the charge pump while the program voltage is being discharged. In one example, the connection between the selected wordlines and the pass voltage prevents the selected wordlines from floating.

Pump discharge sequence improvements in external power supply mode for pulse recovery phases in non-volatile memory

Systems, apparatuses, and methods may provide for technology that groups a plurality of wordline drivers together and supports these grouped wordline drivers via a shared multiplexer, a shared level shifter, and/or one or more shared multi-well level shifters. In one example, such technology includes a shared multiplexer and a first and second grouped global wordline driver coupled to the shared multiplexer. The shared multiplexer is to access data state information from a plurality of memory cells. The first grouped global wordline driver is to output a first plurality of wordlines associated with a first plane. The second grouped global wordline driver is to output a second plurality of wordlines associated with a second plane, where the second plane is different than the first plane.

Grouped global wordline driver with shared bias scheme

Growing community of inventors

Folsom, CA, United States of America

Binh Ngo